Hexagonal boron nitride (h‐BN) is a layered inorganic synthetic crystal exhibiting high
temperature stability and high thermal conductivity. As a ceramic material it has been widely …

Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a
renaissance exemplified by advances in material-level understanding, extensions of known …

A comparison of hexagonal boron nitride (hBN) layers grown by chemical vapor deposition
on C-plane (0001) versus A-plane (112̅0) sapphire (α-Al2O3) substrate is reported. The …

While hexagonal boron nitride (hBN) has been widely used as a buffer or encapsulation
layer for emerging electronic devices, interest in utilizing it for large‐area chemical barrier …

Two-dimensional hexagonal boron nitride (2D h-BN), a representative of 2D layered
materials with unique structure and properties, is one of the most promising inorganic …

Memristors offer vast application opportunities in storage, logic devices, and computation
due to their nonvolatility, low power consumption, and fast operational speeds. Two …

Hexagonal boron nitride (hBN) has attracted significant attention as a two-dimensional (2D)
material due to its unique structure and properties. In this paper, we investigated the gas …

Ceramic fibers coated with thin films of boron nitride (BN) is one approach to extend the
survivability of high-temperature ceramic-matrix composite (CMC) materials in aerospace …

The III-nitride semiconductors are known for their excellent extrinsic properties like direct
bandgap, low electron affinity, and chemical and thermal stability. Among III-nitride …

Hexagonal boron nitride (h‐BN) thin films are grown on a‐plane sapphire substrates at
different temperatures, Tg, by low‐pressure chemical vapor deposition with BCl3 and NH3 …