Gate driver for p-GaN HEMTs with real-time monitoring capability of channel temperature
Normally-off p-GaN HEMTs with Schottky-type gate are becoming of common adoption in
both industrial and consumer electronic market. The presence of a gate current with a …
both industrial and consumer electronic market. The presence of a gate current with a …
[HTML][HTML] Analysis and Modeling of a 650 V GaN-based Half Bridge during Short Circuit operation
S Palazzo - 2023 - tesidottorato.depositolegale.it
Seguendo la visione di un futuro verde e sostenibile, l'uso di semiconduttori di tipo Wide
Band Gap (WBG) nell'elettronica di potenza è di fondamentale importanza, poiché le loro …
Band Gap (WBG) nell'elettronica di potenza è di fondamentale importanza, poiché le loro …
Effect of source, drain and channel spacing from gate of HEMT
This paper presents an AlGaN/GaN HEMT on 6H–SiC substrate. The impact of horizontal
optimization of gate terminal with source-to-gate spacing and drain-to-gate spacing on DC …
optimization of gate terminal with source-to-gate spacing and drain-to-gate spacing on DC …
Enhanced Behavioral Modeling for Short-Circuit Ruggedness Analysis in GaN-based Half-Bridge
Gallium Nitride (GaN) transistors are gaining popularity in industrial and automotive
applications due to their ability to achieve high power density and higher efficiency …
applications due to their ability to achieve high power density and higher efficiency …
Influence of AlN Spacer Layer on SiN-Passivated AlGaN/GaN HEMT
S Prasad, A Islam - … , Circuits and Systems: Select Proceedings of …, 2023 - Springer
This paper has reported the improved reliability of AlGaN/GaN-based HEMT devices
operating at unity gain frequency (f T) of 125.89 GHz and maximum frequency (f MAX) …
operating at unity gain frequency (f T) of 125.89 GHz and maximum frequency (f MAX) …
Analytical demonstration of gate leakage current in AlGaN/GaN/InGaN/GaN DH-HEMT
AA Khan, S Mohammad… - 2017 2nd IEEE …, 2017 - ieeexplore.ieee.org
With the proliferation of semiconductor materials nowdays, high electron mobility transistor
(HEMT) plays an imperious preamble in electronic industry. Latest double heterojunction …
(HEMT) plays an imperious preamble in electronic industry. Latest double heterojunction …
[PDF][PDF] Analysis and Modeling of a 650 V GaN-based Half Bridge during Short Circuit operation
F Marignetti, S Palazzo, G Busatto - iris.unicas.it
Following the vision of a green and sustainable future, the use of Wide Band Gap (WBG)
semiconductors in Power Electronics is of paramount importance, since their physical …
semiconductors in Power Electronics is of paramount importance, since their physical …
MM-wave frequencies GaN-on-Si HEMTs and MMIC technology development
A Eblabla - 2018 - theses.gla.ac.uk
Gallium Nitride (GaN)-based High Electron Mobility Transistors (HEMTs) grown on Silicon
(Si) substrates technology is emerging as one of the most promising candidates for cost …
(Si) substrates technology is emerging as one of the most promising candidates for cost …