High-performance thin-film transistor with atomic layer deposition (ALD)-derived indium–gallium oxide channel for back-end-of-line compatible transistor applications …
In this paper, the feasibility of an indium–gallium oxide (In2 (1-x) Ga2 x O y) film through
combinatorial atomic layer deposition (ALD) as an alternative channel material for back-end …
combinatorial atomic layer deposition (ALD) as an alternative channel material for back-end …
Application of a microwave synthesized ultra-smooth aC thin film for the reduction of dielectric/semiconductor interface trap states of an oxide thin film transistor
In high-κ dielectric-based thin-film transistors (TFTs), tailoring the surface of the gate
dielectric layer is a crucial issue for the improvement of the device performance. Herein, a …
dielectric layer is a crucial issue for the improvement of the device performance. Herein, a …
Combustion-assisted low-temperature ZrO2/SnO2 films for high-performance flexible thin film transistors
B Jang, J Kim, J Lee, G Park, G Yang, J Jang… - npj Flexible …, 2024 - nature.com
We developed high-performance flexible oxide thin-film transistors (TFTs) using SnO2
semiconductor and high-k ZrO2 dielectric, both formed through combustion-assisted sol-gel …
semiconductor and high-k ZrO2 dielectric, both formed through combustion-assisted sol-gel …
Effects of Sn doping on the electrical performance and stability of sub-v operating metal-oxide thin-film transistors fabricated by oxygen annealing
SJ Park, TJ Ha - IEEE Electron Device Letters, 2023 - ieeexplore.ieee.org
The incorporation of Sn into a sol-gel-based indium-gallium-zinc oxide (IGZO) channel layer
is investigated to improve the electrical characteristics and operational stability of …
is investigated to improve the electrical characteristics and operational stability of …
Interface scattering dominated carrier transport in hysteresis-free amorphous InGaZnO thin film transistors with high-k HfAlO gate dielectrics by atom layer deposition
T Huang, Y Zhang, H Liu, R Tao, C Luo… - Semiconductor …, 2021 - iopscience.iop.org
In this work, we systematically investigated the carrier transport of hysteresis-free
amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) incorporating high-k (HfO 2) x (Al 2 …
amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) incorporating high-k (HfO 2) x (Al 2 …
Aqueous solution-deposited aluminum-gallium-oxide alloy gate dielectrics for low voltage fully oxide thin film transistors
Different to conventional high-κ gate dielectric fabrication that usually generates porosity
and pinhole sites when evaporating solvents or impurities in the thin-film formation process …
and pinhole sites when evaporating solvents or impurities in the thin-film formation process …
Solution‐Processed Metal Oxide Thin‐Film Transistor at Low Temperature via A Combination Strategy of H2O2‐Inducement Technique and Infrared Irradiation …
J Yang, D Lin, Y Chen, T Li, J Liu - Small Methods, 2024 - Wiley Online Library
Solution processing has emerged as a promising technique for the fabrication of oxide thin‐
film transistors (TFTs), offering advantages such as low cost, high throughput, and …
film transistors (TFTs), offering advantages such as low cost, high throughput, and …
Preparation and oxidation characteristics of Si layers grown on 4H-SiC substrates
Y Li, S Zhao, M Wei, J Jiao, G Yan, X Liu - Vacuum, 2024 - Elsevier
An experimental investigation into the deposition and oxidation of Si on 4H-SiC was
conducted, leading to the successful synthesis and detailed characterization of a SiO 2/P …
conducted, leading to the successful synthesis and detailed characterization of a SiO 2/P …
Impact of bias stress and endurance switching on electrical characteristics of polycrystalline ZnO-TFTs with Al2O3 gate dielectric
BD Rowlinson, J Zeng, C Patzig, M Ebert… - Journal of Physics D …, 2024 - iopscience.iop.org
This study experimentally investigates electrical characteristics and degradation
phenomena in polycrystalline zinc oxide thin-film transistors (ZnO-TFTs). ZnO-TFTs with Al 2 …
phenomena in polycrystalline zinc oxide thin-film transistors (ZnO-TFTs). ZnO-TFTs with Al 2 …
Effects of La Doping on Persistent Photoconductivity of Solution-Processed InZnO Thin-Film Transistors
Y Zheng, Z Wu, H Tong, Z Zang… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
The existence of persistent photoconductivity (PPC) effects limits successful
commercialization of oxide thin-film transistors (TFTs) in photosensing. This particularly …
commercialization of oxide thin-film transistors (TFTs) in photosensing. This particularly …