We observe that the growth rate of Ga 2 O 3 in plasma-assisted molecular beam epitaxy can
be drastically enhanced by an additional In supply. This enhancement is shown to result …

We use a combined experimental and theoretical approach to study the rates of surface
diffusion processes that govern early stages of thin Ag and Cu film morphological evolution …

Vapor condensation on weakly interacting substrates leads to the formation of three-
dimensional (3D) nanoscale islands (ie, nanostructures). While it is widely accepted that this …

The flexibility and quasi-one-dimensional nature of nanowires offer wide-ranging
possibilities for novel heterostructure design and strain engineering. In this work, we realize …

We observe a catalytic mechanism during the growth of III-O and IV-O materials by suboxide
molecular-beam epitaxy (S-MBE). By supplying the molecular catalysts In 2 O and SnO we …

In this work we demonstrate a two-fold selectivity control of InAs shells grown on crystal
phase and morphology engineered GaAs nanowire (NW) core templates. This selectivity …

Growth of α-Ga2O3 on α-Al2O3 by conventional molecular-beam epitaxy and metal–oxide-catalyzed
epitaxy - IOPscience Skip to content IOP Science home Accessibility Help Search Journals …

The effect of a Bi supply on the development of InAs/GaAs (0 0 1) QDs has been structurally
explored in two growth temperature regimes, one for Bi alloying (380° C) and another for …

Electrolyzing water offers a potential solution to the energy crisis; however, the development
of a facile method for synthesizing electrode materials that possess both high robustness …

Incorporation of bismuth into the III–V semiconductors expands the bandgap towards the
mid-infrared range by bandgap bowing and spin–orbit splitting, providing new opportunities …