In this paper we discuss the design of low-noise amplifiers (LNAs) for both cryogenic and
room-temperature operation in general and take the stability and linearity of the amplifiers …

This letter presents a 67–116-GHz low-noise amplifier (LNA) module with state-of-the-art
cryogenic noise performance. The LNA is based on a monolithic microwave integrated …

Recent advancements in transistor technology, such as the 35 nm InP HEMT, allow for the
development of monolithic microwave integrated circuit (MMIC) low noise amplifiers (LNAs) …

Improvements in the noise temperature of cryogenic field-effect transistors (FET's) and, later,
heterostructure field-effect transistors (HFET's) over the last several decades have been …

The noise models of InP and GaAs HEMTs are compared with measurements at both 300
and 20 K. The critical parameter, Tdrain, in the Pospieszalski noise model is determined as …

Among the branches of astronomy, radio astronomy is unique in that it spans the largest
portion of the electromagnetic spectrum, eg, from about 10 MHz to 300 GHz. On the other …

The microwave frequency range is home to a large amount of cosmologically crucial signals
including the cosmic microwave background, emission from high redshift galaxies, and …

The fundamental limits of the microwave noise performance of high electron-mobility
transistors (HEMTs) are of scientific and practical interest for applications in radio astronomy …

A 50nm MHEMT millimeter-wave MMIC low noise amplifier with state-of-the-art performance
is reported. The 3-stage LNA exhibits on-wafer noise figure (NF) as low as 1.6 dB with 25dB …

A reduction in gate length L g of FETs below 100 nm and corresponding improvements in
transconductance gm, cutoff frequency ft and maximum frequency of oscillation fmax has not …