Halide semiconductors stand at the very beginning of semiconductor science and
technology. CuI was reported as the first transparent conductor, and the first field effect …

Silicon carbide (SiC) is a fascinating material. In one way, it is very simple; there are only two
atoms building up the crystal—silicon and carbon, where each atom is sp3-hybridized and …

In this study, we report on a computational fluid dynamics (CFD) simulation of the chemical
vapor deposition reactor of silicon carbide (SiC) in the methyltrichlorosilane (MTS, CH 3 SiCl …

TCS (SiHCl 3) is widely used in the rapid growth of SiC. However, in the study of using TCS
to grow 4H-SiC, the growth temperature is mainly concentrated in 1550–1650° C, and the …

A process optimization of the growth of silicon carbide (SiC) epilayers on 4° off-axis 4H-SiC
substrates is reported. Process parameters such as growth temperature, C/Si ratio and …

The homoepitaxial growth of 6H-and 4H-SiC on on-axis substrates has been studied in
order to demonstrate the growth of thick, mirror-like epitaxial layers without other polytype …

This paper reviews recent progress in the development of high-speed 4H–SiC bulk crystal
growth technology using the high-temperature gas-source method (high-temperature …

Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4 off-axis substrates |
Journal of Applied Physics | AIP Publishing Skip to Main Content Umbrella Alt Text Umbrella Alt …

Kinetic calculations of the chemical phenomena occurring in the epitaxial growth of silicon
carbide are performed in this study. The main process parameters analyzed are precursor …

Silicon carbide (SiC) is a promising material for electronics due to its hardness, and ability to
carry high currents and high operating temperature. SiC films are currently deposited using …