[HTML][HTML] A Unified Semiconductor-Device-Physics-Based Ballistic Model for the Threshold Voltage of Modern Multiple-Gate Metal-Oxide-Semiconductor Field-Effect …
TK Chiang - Electronic Materials, 2024 - mdpi.com
Based on the minimum conduction band edge caused by the minimum channel potential
resulting from the quasi-3D scaling theory and the 3D density of state (DOS) accompanied …
resulting from the quasi-3D scaling theory and the 3D density of state (DOS) accompanied …
[PDF][PDF] A Unified Semiconductor-Device-Physics-Based Ballistic Model for the Threshold Voltage of Modern Multiple-gate MOSFETS
TK Chiang - 2024 - preprints.org
Based on the minimum conduction band edge caused by the minimum channel potential
resulting from the quasi-3D scaling theory and the 3D density of state (DOS) accompanied …
resulting from the quasi-3D scaling theory and the 3D density of state (DOS) accompanied …