With the miniaturization of silicon-based electronic components, power consumption is
becoming a fundamental issue for micro–nano electronic circuits. The main reason for this is …

In this study, a comparison of the negative capacitance vertical tunnel field-effect transistor
(NC-VTFET) and VTFET for biosensing applications was conducted. Dielectrically …

This paper seeks to present a comprehensive analysis to check the viability of four different
source materials in a charge plasma-based double gate tunnel field effect transistor (CP …

In this work, we contrasted the potential of Mg 2 Si/Si heterojunction-based dopingless (DL)
double gate tunnel field effect transistor (DGTFET) with conventional (C)-DL-DGTFET. The …

In this paper, a new stacked gate oxide L-shaped Tunnel Field Effect Transistor (LTFET) is
proposed. The stacked gate oxide structure incorporates high-k and SiO2 dielectrics. The …

In this paper, we introduce a novel III–V compound material-based junction-free (JF) L-
shaped gate normal line tunneling field-effect transistor (III–V JF L GNLTFET) for improved …

Fabrication of tunnel field effect transistor (TFET) confronts various challenges, one of which
is random dopant fluctuation (RDF), which diminishes the benefits associated with low …

In this work, guard ring separation effect on the total ionizing dose response of a single-
photon avalanche diode (SPAD) is studied. The dark count rate (DCR) under 1 Mrad (SiO2) …

Although the compact capacitance model of point tunneling types of tunneling field-effect
transistors (TFET) has been proposed, those of line tunneling types of TFETs have not been …

This paper presents a double‐gate line‐tunneling field‐effect transistor (DGLTFET) device
optimized for superior analog performance. DGLTFET has thrice the on currents I on, at least …