GeSn-on-GaAs with photoconductive carrier lifetime> 400 ns: role of substrate orientation and atomistic simulation
S Karthikeyan, SW Johnston, D Gayakwad… - Nanoscale, 2024 - pubs.rsc.org
Group IV GeSn quantum material finds application in electronics and silicon-compatible
photonics. Synthesizing these materials with low defect density and high carrier lifetime is a …
photonics. Synthesizing these materials with low defect density and high carrier lifetime is a …
Growth of metamorphic InGaAs on GaAs (111) a: Counteracting lattice mismatch by inserting a thin InAs interlayer
We have successfully grown high quality In x Ga1–x As metamorphic layer on GaAs (111) A
using molecular beam epitaxy. Inserting a thin 3.0–7.1 monolayer (ML) InAs interlayer …
using molecular beam epitaxy. Inserting a thin 3.0–7.1 monolayer (ML) InAs interlayer …
Epitaxial stresses in an InGaAs photoconductive layer for terahertz antennas
The effect of epitaxial stresses on the excess-carrier dynamics and the terahertz radiation
spectrum of the In y Ga 1–y As films have been investigated by optical pump-probe and …
spectrum of the In y Ga 1–y As films have been investigated by optical pump-probe and …
Investigation and fabrication of the semiconductor devices based on metamorphic INALAS/INGAAS/INALAS nanoheterostructures for THz applications
DV Lavrukhin, AE Yachmenev, RR Galiev… - … Journal of High …, 2015 - World Scientific
A metamorphic high electron mobility transistor (MHEMT) with “zig–zag”–like gate of a
length of 46 nm and cut-off frequencies for the current and power gain fr= 0.13 THz and f …
length of 46 nm and cut-off frequencies for the current and power gain fr= 0.13 THz and f …
Electrophysical and structural properties of the composite quantum wells In0. 52Al0. 48As/InxGa1− xAs/In0. 52Al0. 48As with ultrathin InAs inserts
GB Galiev, IS Vasil'evskii, EA Klimov… - Journal of Materials …, 2015 - cambridge.org
The electrophysical and structural properties of InAlAs/InGaAs/InAlAs quantum wells (QWs)
with thin InAs inserts were investigated by means of Hall effect measurements and scanning …
with thin InAs inserts were investigated by means of Hall effect measurements and scanning …
Применение высокоразрешающей рентгеновской дифрактометрии и просвечивающей электронной микроскопии для изучения строения многослойных …
ГБ Галиев, ЕА Климов, РМ Имамов, ГВ Ганин… - Поверхность …, 2016 - elibrary.ru
Исследованы наногетероструктуры InAlAs/InGaAs/InAlAs с различным сложным
дизайном метаморфного буфера и квантовой ямы, выращенные методом молекулярно …
дизайном метаморфного буфера и квантовой ямы, выращенные методом молекулярно …
Эпитаксиальные напряжения в фотопроводящем слое InGaAs для THz-антенн
ДИ Хусяинов, АМ Буряков, ВР Билык… - Письма в Журнал …, 2017 - mathnet.ru
Методами оптического зондирования при фемтосекундной лазерной накачке (optical
pump-probe) и терагерцевой спектроскопии во временно́й области исследовано …
pump-probe) и терагерцевой спектроскопии во временно́й области исследовано …
Epitaxial stresses in InGaAs photoconductive layer for THz antennas
Influence of the epitaxial stresses on dynamics of photoexcited carriers and THz time
domain spectrum in InGaAs films was investigated by pump-probe transient reflectivity and …
domain spectrum in InGaAs films was investigated by pump-probe transient reflectivity and …
Crystal structure of stacking faults in InGaAs/InAlAs/InAs heterostructures
IN Trunkin, MY Presniakov, AL Vasiliev - Crystallography Reports, 2017 - Springer
Stacking faults and dislocations in InGaAs/InAlAs/InAs heterostructures have been studied
by electron microscopy. The use of different techniques of transmission electron microscopy …
by electron microscopy. The use of different techniques of transmission electron microscopy …
Влияние конструкции и условий роста метаморфных гетероструктур In(Ga,Al)As/GaAs на электрофизические параметры двумерного канала InGaAs …
МЮ Чернов, ВА Соловьев, ИЛ Дричко… - Физика и техника …, 2024 - mathnet.ru
Методом молекулярно-пучковой эпитаксии на подложках GaAs получены
нелегированные метаморфные структуры с квантовой ямой In $ _ {0.75} $ Ga $ _ {0.25} …
нелегированные метаморфные структуры с квантовой ямой In $ _ {0.75} $ Ga $ _ {0.25} …