In this research article, the influence of AlGaN back-barrier on the device performance has
been analyzed. The study has been conducted based on the effect on the breakdown …

In this study, a recessed gate wide bandgap III-Nitride (AlN, GaN) nano-HEMT on a lattice
matched β-Ga 2 O 3 substrate is proposed. This study aims to enhance DC and …

Group III-nitride semiconductors such as (Al, Ga, In) N and their alloys have increasingly
attracted the attention of worldwide researchers due to their unique material properties …

This article reports a novel recessed gate AlGaN/AlN/GaN Nano-HEMT with field-plate on
the β-Ga 2 O 3 substrate. The simulation results show that the leakage current is drastically …

In this chapter, the evolution of high-speed devices for high performance and power used in
several applications has been introduced. To design, characterize and fabricate the such …

The payload fairing is a protective clamshell that protects the payload and the third stage
during the early stages of the boost phase, when the atmosphere's aerodynamic forces may …

High-speed devices are very much needed in day-to-day life in broad areas like mobile
communications, RF technology, Nanoelectronics, etc. This can be achieved by developing …

In this paper, a field-plated III-nitride nano-HEMT over the β-Ga 2 O 3 substrate is designed
with three different types of gate structures. The impact of different gate structures on transfer …

In this chapter, a field-plated recessed gate III-nitride High Electron Mobility Transistor
(HEMT) grown on β-Ga2O3 substrate is designed. The electrical characteristics of the …