Phases in HfO2-Based Ferroelectric Thin Films and Their Integration in Low-Power Devices
HfO2-based ferroelectrics are applied in a large spectrum of electronic devices ranging from
ultralow-power logic to nonvolatile memory. The efficacy of these ferroelectrics is that these …
ultralow-power logic to nonvolatile memory. The efficacy of these ferroelectrics is that these …
Effects of plasma power on ferroelectric properties of HfO2-ZrO2 nanolaminates produced by plasma enhanced atomic layer deposition
Y Ahn, Y Jeon, S Lim, J Kim, J Kim, H Seo - Surfaces and Interfaces, 2023 - Elsevier
This study introduces the use of plasma-enhanced atomic layer deposition (PEALD) for
growing ultrathin Zr-doped hafnium oxide (HfO 2-ZrO 2 or HZO) nanolaminates and the …
growing ultrathin Zr-doped hafnium oxide (HfO 2-ZrO 2 or HZO) nanolaminates and the …
Eliminating Ferroelectric Hysteresis in All-Two-Dimensional Gate-Stack Negative-Capacitance Transistors
H Quan, D Meng, X Ma, C Qiu - ACS Applied Materials & …, 2023 - ACS Publications
Boltzmann distribution thermal tails of carriers restrain the subthreshold swing (SS) of field-
effect transistors (FETs) to be lower than 60 mV/decade at room temperature, which restrains …
effect transistors (FETs) to be lower than 60 mV/decade at room temperature, which restrains …
Observation of stabilized negative capacitance effect in hafnium-based ferroic films
A negative capacitance (NC) effect has been proposed as a critical pathway to overcome
the'Boltzmann tyranny'of electrons, achieve the steep slope operation of transistors and …
the'Boltzmann tyranny'of electrons, achieve the steep slope operation of transistors and …
Plasma-Irradiated Hafnia Ferroelectrics for High-Performance Flexible Thin Film Transistors
Integrating unconventional HfO2-based ferroelectrics in thin film transistors (TFTs) has
proven effective in enhancing performance by stabilizing negative capacitance. This is …
proven effective in enhancing performance by stabilizing negative capacitance. This is …