The present inventors have studied to develop a technique to form a coating film of
AlNaforementioned on a facet of a cavity to implement a nitride semiconductor laser device …

In a highly developed information Society where image information with high capacity is
transported through cellular phones or internet, there is a demand for development of optical …

(73) Assignee: Sharp Kabushiki Kaisha, Osaka (JP) 2003, OO15715 A1 1/2003 Sakai (*)
Notice: Subject to any disclaimer, the term of this(Continued) patent is extended or adjusted …

A nitride-based semiconductor laser device includes a facet coating film including an
alteration preventing layer formed on a light reflecting side facet of a nitride-based …

(57) ABSTRACT A nitride semiconductor laser diode has a quantum well layer consisting of
a mixed crystal of Al, In, GaN (x. 120.5, y 120 and 1-X1-y1s0. 5) in a group III nitride …

BACKGROUND The present disclosure relates to nitride semiconductor light-emitting
devices, speci? cally relates to nitride semicon ductor light-emitting devices in Which a …

ABSTRACT A nitride-based semiconductor laser device includes a front facet located on a
forward end of an optical waveguide and formed by a substantially (000-1) plane of a nitride …

SUMMARY OF THE INVENTION 0007 We have conducted research with the aim of realiz
ing a nitride semiconductor laser device which does not exhibit low reliability caused by …

A semiconductor laser device according to a first aspect of the present invention comprises a
semiconductor element layer having a light emitting layer, a first cavity facet formed on an …

(57) ABSTRACT A nitride-based semiconductor laser device includes an opti cal waveguide
extending substantially parallel to a 0001 direction of a nitride-based semiconductor layer, a …