[HTML][HTML] Unveiling the structural origin to control resistance drift in phase-change memory materials
The global demand for data storage and processing is increasing exponentially. To deal
with this challenge, massive efforts have been devoted to the development of advanced …
with this challenge, massive efforts have been devoted to the development of advanced …
Phase‐Change Superlattice Materials toward Low Power Consumption and High Density Data Storage: Microscopic Picture, Working Principles, and Optimization
To meet the requirement of big data era and neuromorphic computations, nonvolatile
memory with fast speed, high density, and low power consumption is urgently needed. As an …
memory with fast speed, high density, and low power consumption is urgently needed. As an …
Light-induced complete reversal of ferroelectric polarization in sliding ferroelectrics
Q Yang, S Meng - Physical Review Letters, 2024 - APS
Previous experiments have provided evidence of sliding ferroelectricity and photoexcited
interlayer shear displacement in two-dimensional materials, respectively. Herein, we find …
interlayer shear displacement in two-dimensional materials, respectively. Herein, we find …
Metasurface with Nanostructured Ge2Sb2Te5 as a Platform for Broadband‐Operating Wavefront Switch
Broadband‐operating active devices within a small‐footprint are highly on demand in
various nanophotonic fields such as fiber‐optic communication systems and chip‐based …
various nanophotonic fields such as fiber‐optic communication systems and chip‐based …
How arsenic makes amorphous GeSe a robust chalcogenide glass for advanced memory integration
The 3D integration technology in semiconductor fabrication requires a key component, the
ovonic threshold switching (OTS) selector, to suppress the current leakage. The As doped …
ovonic threshold switching (OTS) selector, to suppress the current leakage. The As doped …
Metastability and Phase Change Phenomena
AV Kolobov, J Tominaga - Chalcogenides; Springer: Berlin/Heidelberg …, 2012 - Springer
A state-of-the-art description of metastability observed in chalcogenide alloys is presented
with the accent on the underlying physics. A comparison is made between sulphur …
with the accent on the underlying physics. A comparison is made between sulphur …
Emerging phase change memory devices using non-oxide semiconducting glasses
S Agarwal, P Lohia, DK Dwivedi - Journal of Non-Crystalline Solids, 2022 - Elsevier
In the new computing world, phase-change memory (PCM) has recently evolved as a non-
volatile key-enabling technology that has been used as memory storage. PCM has also …
volatile key-enabling technology that has been used as memory storage. PCM has also …
Resistive switching mechanism of MoS2 based atomristor
Resistive switching mechanism of MoS2 based atomristor - IOPscience Skip to content IOP
Science home Accessibility Help Search Journals Journals list Browse more than 100 …
Science home Accessibility Help Search Journals Journals list Browse more than 100 …
Electronic Excitation-Induced Semiconductor-Metal Transitions Enabling Ovonic Threshold Switching in Boron Telluride Glasses
Ovonic threshold switching in chalcogenide glasses is a crucial physical phenomenon
behind state-of-the-art memory chip technologies. Binary tellurides are one of the emerging …
behind state-of-the-art memory chip technologies. Binary tellurides are one of the emerging …
Conductive mechanism in memristor at the thinnest limit: The case based on monolayer boron nitride
Atomic picture and electronic transport property are taken into account to investigate the
nonvolatile resistive switching mechanism of a memristor at the thinnest limit, just based on …
nonvolatile resistive switching mechanism of a memristor at the thinnest limit, just based on …