Power density has grown to be the dominant challenge for continued complementary metal–
oxide–semiconductor (CMOS) technology scaling. Together with recent improvements in …

Improving the energy efficiency of electronics is one of the grand challenges of
semiconductor device physics, as global energy consumption by electronics grows in …

Integrated nanoelectromechanical (NEM) relays can be used instead of transistors to
implement ultra-low power logic circuits, due to their abrupt turn off characteristics and zero …

The design, fabrication, and characterization of the first piezoelectric nanoelectromechanical
relays with sub-1-volt actuation (520 mV) are presented. The low actuation voltage is …

We report the first experimental demonstration of a three-terminal nanoelectromechanical
field effect transistor (NEMFET) with measurable subthreshold slope as small as 6 mV/dec at …

Power density has grown to be the dominant challenge for continued IC technology scaling.
This has led to renewed interest in mechanical computing for ultra-low-power applications …

Nano and microelectromechanical relays can be used in lieu of transistors to build digital
integrated circuits that can operate with zero leakage current at high operating temperatures …

Various logic functions can be implemented by appropriately biasing a single seesaw relay.
The seesaw relay can also be configured as a bistable latch so that a memory cell can be …

An alternative three-terminal (3T) subthermal subthreshold slope (SS) switch is required to
overcome the exponential increase in leakage current with an increase in the drive current …

This paper presents techniques for designing nanoelectromechanical relay-based logic
circuits using six-terminal relays that behave as universal logic gates. With proper biasing, a …