Exploration of chemical composition of In–Ga–Zn–O system via PEALD technique for optimal physical and electrical properties
Abstract In–Ga–Zn–O (IGZO) material has been researched due to its favorable electrical
characteristics for application in thin‐film transistor (TFT) applications such as low off current …
characteristics for application in thin‐film transistor (TFT) applications such as low off current …
High-speed dual-gate a-IGZO TFT-based circuits with top-gate offset structure
Owing to bulk-accumulation, dual-gate (DG) amorphous-indium-gallium-zinc-oxide (a-IGZO)
thin-film transistors (TFTs) with top-and bottom-gates electrically tied together (DG-driving) …
thin-film transistors (TFTs) with top-and bottom-gates electrically tied together (DG-driving) …
Heterogeneous metal oxide channel structure for ultra-high sensitivity phototransistor with modulated operating conditions
In this study, a thin-film transistor with a heterogeneous channel structure was introduced
into oxide semiconductors to improve their electrical properties, which resulted in high …
into oxide semiconductors to improve their electrical properties, which resulted in high …
Enhanced reliability of In–Ga–ZnO thin-film transistors through design of dual passivation layers
A Abliz, D Wan, JY Chen, L Xu, J He… - … on Electron Devices, 2018 - ieeexplore.ieee.org
This paper investigates the effects of different passivation layers (PVLs) on the electrical
performance and reliability of amorphous indium gallium zinc oxide (a-In-Ga-ZnO) thin film …
performance and reliability of amorphous indium gallium zinc oxide (a-In-Ga-ZnO) thin film …
Removal of negative-bias-illumination-stress instability in amorphous-InGaZnO thin-film transistors by top-gate offset structure
A highly stable, dual-gate (DG) amorphous, indium-gallium-zinc oxide (a-IGZO) thin-film
transistor (TFT) with an offset top-gate (TG) is reported. Given that both gates are opaque …
transistor (TFT) with an offset top-gate (TG) is reported. Given that both gates are opaque …
One gate diode-connected dual-gate a-IGZO TFT driven pixel circuit for active matrix organic light-emitting diode displays
C Wang, Z Hu, X He, C Liao… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
A dual-gate (DG) amorphous indium-gallium-zinc-oxide thin-film transistor (TFT)-driven pixel
circuit for active-matrix organic light-emitting diode displays is presented. One gate of the …
circuit for active-matrix organic light-emitting diode displays is presented. One gate of the …
Hydrogenation of Mg-doped InGaZnO thin-film transistors for enhanced electrical performance and stability
A Abliz - IEEE Transactions on Electron Devices, 2021 - ieeexplore.ieee.org
In this work, the hydrogenation (H) of Mg-doped amorphous InGaZnO (a-IGZO: Mg/H) thin-
film transistors (TFTs) was fabricated via RF sputtering method. As a consequence, the a …
film transistors (TFTs) was fabricated via RF sputtering method. As a consequence, the a …
Reduced dynamic gate pulse stress instability in dual gate a-InGaZnO thin film transistors
The dynamic gate pulse stress effect on the electrical performance of single gate (SG) and
dual gate (DG) thin-film transistors (TFTs) is reported. The stress is implemented with rising …
dual gate (DG) thin-film transistors (TFTs) is reported. The stress is implemented with rising …
Highly robust flexible oxide thin-film transistors by bulk accumulation
We report the achievement of flexible oxide thin-film transistors (TFTs) that are highly robust
under mechanical bending stress. Fabricated on solution-processed polyimide, the oxide …
under mechanical bending stress. Fabricated on solution-processed polyimide, the oxide …
Transparent flexible high mobility TFTs based on ZnON semiconductor with dual gate structure
EJ Park, HM Lee, YS Kim, HJ Jeong… - IEEE Electron Device …, 2020 - ieeexplore.ieee.org
High mobility thin film transistors (TFTs) based on zinc oxynitride (ZnON) semiconductor
were fabricated onto polyethylene-2.6-naphthalate (PEN) substrates. The application of a …
were fabricated onto polyethylene-2.6-naphthalate (PEN) substrates. The application of a …