Nitride‐based light‐emitting diodes (LEDs) have been developed significantly in terms of
both fundamental understanding as well as application, but there are still many new …

Quaternary InAlGaN barriers with thickness of 7 nm for HEMT application were grown on 3-
inch semi-insulating 4H-SiC substrates by metal organic chemical vapor deposition …

In this paper, we approached a novel fabrication for non phosphor white light emitting
diodes (LEDs) by the growth of AlGaN/InAlGaN double-hetero structures using by mixed …

Al incorporation into the InGaN films has been successfully attained from the cermet targets
under the working temperature of 200° C and output power of 120 W by the RF sputtering …

The results of the growth of thin (∼ 3 nm) InGaN/GaN single quantum wells (SQWs) with
emission wavelengths in the green region by plasma-assisted molecular beam epitaxy are …

Quaternary AlInGaN multiple quantum well structures with (Al) InGaN wells were grown on
sapphire substrates by metalorganic chemical vapor deposition. The structural and optical …

The structural and optical properties of near-ultraviolet (UV) multiple quantum well (MQW)
structures using quaternary AlInGaN as the well layers have been investigated. The …

Pulsed UV lasers at the wavelengths of 374 and 280nm are realized by cascaded second
harmonic generation (SHG) and sum frequency generation (SFG) processes using a Nd …

Quantum well structures for nitride‐based LEDs are mainly grown in c‐direction, whereby
the quantum confined Stark‐effect (QCSE) reduces the overlap of the electron and hole …

An epitaxial substrate having preferable two dimensional electron gas characteristic and
contact characteristic is provided in the present invention. A channel layer is formed on a …