Tailoring oxygen disparity induced luminescence of Dy3+ incorporated WO3 thin films

S Chalotra, S Kaur, P Kaur, G Gupta… - Materials Chemistry and …, 2024 - Elsevier
Pure and Dy doped WO 3 thin films have been prepared by the physical vapor deposition
method of electron beam evaporation technique under a pressure of 1× 10− 5 mbar. Films …

Far-infrared investigation of ternary Ge–Se–Sb and quaternary Ge–Se–Sb–Te chalcogenide glasses

N Sharma, S Sharda, V Sharma, P Sharma - Journal of non-crystalline …, 2013 - Elsevier
Chalcogenide glasses are remarkable materials for remote sensors, infrared imaging and
infrared fibers due to their transparency in Far-infrared (IR) region. Far-IR absorption spectra …

Sb2 (SxSe1-x) 3 thin films by electrodeposition: Role of deposition potential on the formation of the solid solution and photovoltaic performance via device simulation

EAR Pérez, E Regalado-Pérez, A Cerdán-Pasarán… - Current Applied …, 2023 - Elsevier
This work presents one-step electrodeposition of antimony sulfide selenide (Sb 2 (S x Se 1-
x) 3) thin films on fluorine doped SnO 2 substrates. Based on the cyclic voltammetry studies …

Complex Er-doped selenium-based chalcogenides in the far-infrared region: a structural bonding arrangement study

C Kumari, SC Katyal, S Chhoker, P Sharma - Physica Scripta, 2022 - iopscience.iop.org
Selenium-based chalcogenide glasses show tremendous infrared transmission in the 2–15
μm region, and these amorphous glasses could be easily formed into optical devices ie …

Finger prints of chemical bonds in Sb–Se–Ge and Sb–Se–Ge–In glasses: a far-IR study

S Sharda, N Sharma, P Sharma, V Sharma - Journal of non-crystalline …, 2013 - Elsevier
Chalcogenide glasses exhibit good optical properties because of their ability to transmit in
the infrared region. Far-Infrared transmission spectra give an insight into the absorbed …

Correlation between structural modifications and physical parameters of Sb doped InSe alloys for optoelectronic applications

D Thakur, VS Rangra - Optical Materials, 2024 - Elsevier
Abstract Bulk samples of In 0.1 Se 0.9-x Sb x (0≤ x≤ 0.24) were synthesized using the
conventional melt-quenching technique. The impact of Sb doping on the structural and …

Compositional variation and thermal annealing effect on optical properties of Se-Te-Sb semiconductor thin films

ER Shaaban, HA Elshaikh, MM Soraya - … and Advanced Materials …, 2015 - oam-rc.inoe.ro
Thin films with thickness of about 1040 nm of the semiconducting glassesSe80-xTe20Sbx
with x= 0, 2, 4, 6, 8, and 10 at.% prepared by melt quench technique was evaporated by …

Investigation of epsilon near zero modes from Drude-Lorentz optical modelling of reflectance spectrum in plasmonic CuS nanostructured films

H Singh, S Kumar, PK Sharma - AIP Conference Proceedings, 2024 - pubs.aip.org
Plasmonic materials that support epsilon-near-zero (ENZ) modes offer the opportunity to
design the enhanced light-matter interactions at the nanoscale through extreme …

Structural Characterization and Compositional Dependence of Optical Properties of Ge16Se52Te32−x Sb x (x = 0, 2, 4, 6, 8) …

A Kaistha, V Modgil, VS Rangra - Journal of Electronic Materials, 2015 - Springer
Abstract Antimony-substituted Ge-Se-Te quaternary chalcogenide glasses have been
synthesized using the melt quench technique. The bonding arrangements in the glassy …

Influence of exposure time of LASER radiations on structural, optical, nonlinear optical and dielectric results of Sb2Se3 nanofilms

AA Moez, AI Ali - Journal of Materials Science: Materials in Electronics, 2021 - Springer
Sb 2 Se 3 thin films which prepared using thermal evaporation were irradiated using LASER
beam with different times of exposure (t expos). X-ray diffraction (XRD) results showed that …