Abstract The Kinetic Monte Carlo (KMC) algorithm is a particularly apt technique to simulate
the complex processing of semiconductor devices. In this review, some of the main …

Basically all properties of semiconductor devices are influenced by the distribution of point
defects in their active areas. This book contains the first comprehensive review of the …

Diffusion experiments of phosphorus (P), arsenic (As), and antimony (Sb) in high purity
germanium (Ge) were performed at temperatures between 600 and 920 C⁠. Secondary ion …

Several complex dynamical phenomena have been observed in heavily doped Si, but a
comprehensive account of the underlying atomic-scale processes is lacking. We report a …

We report the diffusion of boron, arsenic, and phosphorus in silicon isotope multilayer
structures at temperatures between 850° C and 1100° C. The diffusion of all dopants and …

We present an energy basin finding algorithm for identifying the states in absorbing Markov
chains used for accelerating kinetic Monte Carlo (KMC) simulations out of trapping energy …

Electronic structure calculations are used to predict the activation enthalpies of diffusion for a
range of impurity atoms (aluminium, gallium, indium, silicon, tin, phosphorus, arsenic, and …

The diffusion of self-atoms and n-type dopants such as phosphorus, arsenic, and antimony
in germanium was studied by means of isotopically controlled multilayer structures doped …

Emerging wide bandgap semiconductor devices such as the ones built with SiC have the
potential to revolutionize the power electronics industry through faster switching speeds …

Defects in semiconductors have been studied for many years, in many cases with a view
toward controlling their behaviour through various forms of “defect engineering”. For …