Flexible InGaZnO thin‐film transistors (TFTs) have been extensively investigated over the
last decade with an aim to transferring electronic devices from rigid substrates to light …

In this work, low temperature fabrication of a sputtered high-k HfO 2 gate dielectric for
flexible a-IGZO thin film transistors (TFTs) on polyimide substrates was investigated. The …

Field‐effect transistors (FETs) with nanoscale channels have emerged as excellent
platforms for constructing high‐sensitivity biosensors. However, in typical FET‐based …

In this letter, high-performance thin-film transistors (TFTs), with indium oxide (In 2 O 3) as
front channel layer, high permittivity ZrO 2 as dielectric layer, and aluminum oxide (Al 2 O 3) …

In this study, a thin-film transistor with a heterogeneous channel structure was introduced
into oxide semiconductors to improve their electrical properties, which resulted in high …

Amorphous indium-gallium-zinc oxide (a-IGZO) films, which are widely regarded as a
promising material for the channel layer in thin-film transistors (TFTs), require a relatively …

At present, amorphous indium–gallium–zinc oxide (IGZO) semiconductor has become the
most commonly used semiconductor material and is widely used in flat panel displays and …

Abstract Alumina (Al 2 O 3) films of different thicknesses have been grown at different low
temperatures (100 C–250 C) by atomic–layer deposition on n–type Si substrate. The …

In this study, we investigated the utilization of alumina (AlO x), formed through the oxidation
of thermally evaporated aluminum, as a passivation layer for nanometer-thin indium-tin …

The coexistence of high bias stress stability and high performance is the key problem of low-
temperature application of amorphous indium gallium zinc oxide (a-IGZO) thin film …