Memristive technologies for data storage, computation, encryption, and radio-frequency communication

M Lanza, A Sebastian, WD Lu, M Le Gallo, MF Chang… - Science, 2022 - science.org
Memristive devices, which combine a resistor with memory functions such that voltage
pulses can change their resistance (and hence their memory state) in a nonvolatile manner …

Trending IC design directions in 2022

CH Chan, L Cheng, W Deng, P Feng… - Journal of …, 2022 - iopscience.iop.org
For the non-stop demands for a better and smarter society, the number of electronic devices
keeps increasing exponentially; and the computation power, communication data rate, smart …

A charge domain SRAM compute-in-memory macro with C-2C ladder-based 8-bit MAC unit in 22-nm FinFET process for edge inference

H Wang, R Liu, R Dorrance… - IEEE Journal of Solid …, 2023 - ieeexplore.ieee.org
Compute-in-memory (CiM) is one promising solution to address the memory bottleneck
existing in traditional computing architectures. However, the tradeoff between energy …

A 28nm 64-kb 31.6-TFLOPS/W digital-domain floating-point-computing-unit and double-bit 6T-SRAM computing-in-memory macro for floating-point CNNs

A Guo, X Si, X Chen, F Dong, X Pu, D Li… - … Solid-State Circuits …, 2023 - ieeexplore.ieee.org
SRAM-based computing-in-memory (SRAM-CIM) has been intensively studied and
developed to improve the energy and area efficiency of AI devices. SRAM-CIMs have …

A 22nm 832Kb hybrid-domain floating-point SRAM in-memory-compute macro with 16.2-70.2 TFLOPS/W for high-accuracy AI-edge devices

PC Wu, JW Su, LY Hong, JS Ren… - … Solid-State Circuits …, 2023 - ieeexplore.ieee.org
Advanced artificial-intelligence (Al) edge devices require high energy-efficiency (E) and high
inference-accuracy 2, 4-6. An SRAM-based compute-in-memory (CIM) based on MAC …

A 28nm horizontal-weight-shift and vertical-feature-shift-based separate-wl 6t-sram computation-in-memory unit-macro for edge depthwise neural-networks

B Wang, C Xue, Z Feng, Z Zhang, H Liu… - … Solid-State Circuits …, 2023 - ieeexplore.ieee.org
SRAM-based computation-in-memory (CIM) has shown great potential in improving the
energy efficiency of edge-AI devices. Most CIM work 3–4 is targeted at MAC operations with …

7.6 A 70.85-86.27 TOPS/W PVT-insensitive 8b word-wise ACIM with post-processing relaxation

SE Hsieh, CH Wei, CX Xue, HW Lin… - … Solid-State Circuits …, 2023 - ieeexplore.ieee.org
Tiny-machine learning (TinyML) and artificial intelligence-of-things (AIoT) present new
opportunities for machine-intelligent applications with stringent energy constraints. To …

7.8 A 22nm delta-sigma computing-in-memory (Δ∑ CIM) SRAM macro with near-zero-mean outputs and LSB-first ADCs achieving 21.38 TOPS/W for 8b-MAC edge AI …

P Chen, M Wu, W Zhao, J Cui, Z Wang… - … Solid-State Circuits …, 2023 - ieeexplore.ieee.org
In Al-edge devices, the changes of input features are normally progressive or occasional,
eg, abnormal surveillance, hence the reprocessing of unchanged data consumes a …

Benchmarking in-memory computing architectures

NR Shanbhag, SK Roy - IEEE Open Journal of the Solid-State …, 2022 - ieeexplore.ieee.org
In-memory computing (IMC) architectures have emerged as a compelling platform to
implement energy-efficient machine learning (ML) systems. However, today, the energy …

A 28 nm 16 kb bit-scalable charge-domain transpose 6T SRAM in-memory computing macro

J Song, X Tang, X Qiao, Y Wang… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
This article presents a compact, robust, and transposable SRAM in-memory computing
(IMC) macro to support feed forward (FF) and back propagation (BP) computation within a …