Study of discrete doping-induced variability in junctionless nanowire MOSFETs using dissipative quantum transport simulations
M Aldegunde, A Martinez… - IEEE Electron Device …, 2012 - ieeexplore.ieee.org
The impact of discrete doping in junctionless gate all-around n-type silicon nanowire
transistors is studied using 3-D nonequilibrium Green's functions simulations. The studied …
transistors is studied using 3-D nonequilibrium Green's functions simulations. The studied …
Strain and thermal conductivity in ultrathin suspended silicon nanowires
We report on the uniaxial strain and thermal conductivity of well-ordered, suspended silicon
nanowire arrays between 10 to 20 nm width and 22 nm half-pitch, fabricated by extreme …
nanowire arrays between 10 to 20 nm width and 22 nm half-pitch, fabricated by extreme …
Comparison of fin-edge roughness and metal grain work function variability in InGaAs and Si FinFETs
The fin-edge roughness (FER) and the TiN metal grain work function (MGW)-induced
variability affecting OFF and ON device characteristics are studied and compared between a …
variability affecting OFF and ON device characteristics are studied and compared between a …
Strain induced variability study in Gate-All-Around vertically-stacked horizontal nanosheet transistors
Using physics-based predictive technology CAD simulations, we show the improvements
possible in device performance via strain engineering in vertically-stacked horizontal gate …
possible in device performance via strain engineering in vertically-stacked horizontal gate …
Quantum transport in a silicon nanowire FET transistor: Hot electrons and local power dissipation
A Martinez, JR Barker - Materials, 2020 - mdpi.com
A review and perspective is presented of the classical, semi-classical and fully quantum
routes to the simulation of electro-thermal phenomena in ultra-scaled silicon nanowire field …
routes to the simulation of electro-thermal phenomena in ultra-scaled silicon nanowire field …
Variability effects in nanowire and macaroni MOSFETs—Part I: Random dopant fluctuations
AS Spinelli, CM Compagnoni… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
In this article and the related Part II, we investigate variability effects on the threshold voltage
of nanowire and Macaroni MOSFETs, focusing on random dopant fluctuations (RDFs) and …
of nanowire and Macaroni MOSFETs, focusing on random dopant fluctuations (RDFs) and …
DC/AC/RF characteristic fluctuations induced by various random discrete dopants of gate-all-around silicon nanowire n-MOSFETs
In this paper, we explored the characteristic fluctuations induced by various random discrete
dopants (RDDs) on gate-all-around silicon nanowire metal-oxide semiconductor field-effect …
dopants (RDDs) on gate-all-around silicon nanowire metal-oxide semiconductor field-effect …
Contact resistances in trigate and FinFET devices in a non-equilibrium Green's functions approach
We compute the contact resistances R c in trigate and FinFET devices with widths and
heights in the 4–24 nm range using a Non-Equilibrium Green's Functions approach …
heights in the 4–24 nm range using a Non-Equilibrium Green's Functions approach …
Modelling and simulation of subthreshold behaviour of cylindrical surrounding double gate MOSFET for enhanced electrostatic integrity
In this paper, a physics based model has been presented for the Cylindrical Surrounding
Double Gate (CSDG) Nano-wire MOSFET. The analytical model is based on the solution of …
Double Gate (CSDG) Nano-wire MOSFET. The analytical model is based on the solution of …
NESS: new flexible nano-electronic simulation software
In this paper, we present an integrated simulation environment called NESS that enables the
modelling of nano CMOS transistors with different models and degrees of complexity …
modelling of nano CMOS transistors with different models and degrees of complexity …