Due to their specific structures the power devices need special models different from those developed for low power electronics. The development of such special models is far from …
Main problems encountered in modelling of high power semiconductor devices are discussed in this paper. Unipolar and bipolar device properties are compared and the …
The main problems occurring during high power device modeling are discussed in this paper. Unipolar and bipolar device properties are compared and the problems concerning …
Main problems encountered in modelling of high power semiconductor devices are discussed in this paper. Unipolar and bipolar device properties are compared and the …
High prices and hardware requirements considerably limit the access to modern CAD tools and device models while free versions usually have too serious limitations. In order to …
W Grabinski, T Grasser, G Gildenblat… - … on Compact Modeling …, 2007 - iue.tuwien.ac.at
MOS-AK is an European, independent compact modeling forum created by a group of the engineers, researchers and compact modeling enthusiasts to promote advanced compact …