On-chip infrared photonics with Si-Ge-heterostructures: What is next?
The integration of Ge on Si for photonics applications has reached a high level of maturity:
Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge …
Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge …
High-power mid-infrared (λ∼ 3-6 μm) quantum cascade lasers
The performances of mid-infrared (IR) quantum cascade lasers (QCLs) are now reaching a
maturity level that enables a variety of applications which require compact laser sources …
maturity level that enables a variety of applications which require compact laser sources …
Three-dimensional reconstruction of interface roughness and alloy disorder in Ge/GeSi asymmetric coupled quantum wells using electron tomography
E Paysen, G Capellini, E Talamas Simola… - … Applied Materials & …, 2024 - ACS Publications
Interfaces play an essential role in the performance of ever-shrinking semiconductor
devices, making comprehensive determination of their three-dimensional (3D) structural …
devices, making comprehensive determination of their three-dimensional (3D) structural …
Magnetic-field-induced cavity protection for intersubband polaritons
We analyze the effect of a strong perpendicular magnetic field on an intersubband transition
in a disordered doped quantum well strongly coupled to an optical cavity. The magnetic field …
in a disordered doped quantum well strongly coupled to an optical cavity. The magnetic field …
High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THz
E Campagna, E Talamas Simola, T Venanzi… - …, 2024 - degruyter.com
A parabolic potential that confines charge carriers along the growth direction of quantum
wells semiconductor systems is characterized by a single resonance frequency, associated …
wells semiconductor systems is characterized by a single resonance frequency, associated …
Impact of the valley orbit coupling on exchange gate for spin qubits in silicon
B Tariq, X Hu - npj Quantum Information, 2022 - nature.com
The mixing of conduction band valleys plays a critical role in determining electronic
spectrum and dynamics in a silicon nanostructure. Here, we investigate theoretically how …
spectrum and dynamics in a silicon nanostructure. Here, we investigate theoretically how …
Analysis of interface roughness in strained InGaAs/AlInAs quantum cascade laser structures (λ∼ 4.6 μm) by atom probe tomography
In this study, in-plane interface roughness (IFR) values are extracted via atomic probe
tomography (APT) for a few key interfaces within a quantum cascade laser (QCL) active …
tomography (APT) for a few key interfaces within a quantum cascade laser (QCL) active …
State-of-the-art mid-infrared QCLs: elastic scattering, high CW power and coherent-power scaling
The achievement in 1994 [1] of implementing the intersubband-transition laser concept [2],
together with the achievement in 2002 of continuous-wave (CW) roomtemperature (RT) …
together with the achievement in 2002 of continuous-wave (CW) roomtemperature (RT) …
[HTML][HTML] Nonlinear Charge Transport and Excitable Phenomena in Semiconductor Superlattices
Semiconductor superlattices are periodic nanostructures consisting of epitaxially grown
quantum wells and barriers. For thick barriers, the quantum wells are weakly coupled and …
quantum wells and barriers. For thick barriers, the quantum wells are weakly coupled and …
Valley splitting depending on the size and location of a silicon quantum dot
The valley splitting (VS) of a silicon quantum dot plays an important role for the performance
and scalability of silicon spin qubits. In this paper we investigate the VS of a SiGe/Si/SiGe …
and scalability of silicon spin qubits. In this paper we investigate the VS of a SiGe/Si/SiGe …