Thermo-mechanical reliability of glass substrate and Through Glass Vias (TGV): A comprehensive review

Y Lai, K Pan, S Park - Microelectronics Reliability, 2024 - Elsevier
The evolution of electronic packaging technology towards the adoption of glass substrates
marks a significant advancement in overcoming the constraints posed by traditional organic …

Design, fabrication, and characterization of ultrathin 3-D glass interposers with through-package-vias at same pitch as TSVs in silicon

V Sukumaran, G Kumar… - IEEE Transactions …, 2014 - ieeexplore.ieee.org
A double-sided and ultrathin 3-D glass interposer with through package vias (TPVs) at same
pitch as through silicon vias (TSVs) in silicon interposers is developed to provide a …

Large-scale 3D chips: Challenges and solutions for design automation, testing, and trustworthy integration

J Knechtel, O Sinanoglu, IAM Elfadel… - IPSJ Transactions on …, 2017 - jstage.jst.go.jp
Three-dimensional (3D) integration of electronic chips has been advocated by both industry
and academia for many years. It is acknowledged as one of the most promising approaches …

Interposer technologies for high-performance applications

A Usman, E Shah, NB Satishprasad… - IEEE Transactions …, 2017 - ieeexplore.ieee.org
This paper explores the current state of the art in silicon, organic, and glass interposer
technologies and their high-performance applications. Issues and challenges broadly …

Latency, bandwidth and power benefits of the superchips integration scheme

SC Jangam, S Pal, A Bajwa, S Pamarti… - 2017 IEEE 67th …, 2017 - ieeexplore.ieee.org
In this paper, we describe the performance and power benefits of our Fine Pitch integration
scheme on a Silicon Interconnect Fabric (Si IF). Here we propose a Simple Universal …

Three-dimensional integrated circuit which incorporates a glass interposer and method for fabricating the same

YA Chen, YJ Lu, WP Thomas III - US Patent 9,082,764, 2015 - Google Patents
A three-dimensional integrated circuit (3D-IC) which incorporates a glass interposer and a
method for fabricating the three-dimensional integrated circuit (3D-IC) with the glass …

Measurement and analysis of a high-speed TSV channel

H Kim, J Cho, M Kim, K Kim, J Lee… - IEEE Transactions …, 2012 - ieeexplore.ieee.org
Using high-speed through-silicon via (TSV) channels is a potential means of utilizing 3-D
interconnections to realize considerable high-bandwidth throughput in vertically stacked and …

High-efficiency PCB-and package-level wireless power transfer interconnection scheme using magnetic field resonance coupling

S Kim, DH Jung, JJ Kim, B Bae, S Kong… - IEEE Transactions …, 2015 - ieeexplore.ieee.org
As technology develops, the number of chips increases while the thickness of mobile
products continuously decreases, which leads to the need for high-density packaging …

Asymmetric wafer-level polyimide and Cu/Sn hybrid bonding for 3-D heterogeneous integration

CH Lu, SY Jhu, CP Chen, BL Tsai… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
A low-temperature wafer-level polyimide/metal asymmetric hybrid bonding structure using
Cu/Sn metal and low-curing temperature polyimide is proposed in this paper. The Cu/Sn …

Compact transient thermal model of microfluidically cooled three-dimensional stacked chips with pin-fin enhanced microgap

Y Hu, MO Hossen, Z Wan… - Journal of …, 2021 - asmedigitalcollection.asme.org
Abstract Three-dimensional (3D) stacked integrated circuit (SIC) chips are one of the most
promising technologies to achieve compact, high-performance, and energy-efficient …