Int. Cl. The present invention relates to a GaN based nitride based HOIL 29/06(2006.01)
light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding …

An optoelectronic semiconductor body includes a semicon ductor layer sequence which has
an active layer suitable for generating electromagnetic radiation, and a first and a second …

A relatively small ESD protection diode is formed on the same chip as a light emitting diode.
In one embodiment, the ESD diode is a mesa-type diode isolated from the light emitting …

US7642121B2 - LED bonding structures and methods of fabricating LED bonding structures -
Google Patents US7642121B2 - LED bonding structures and methods of fabricating LED …

(57) ABSTRACT A light-emitting diode (LED) structure with electrostatic discharge (ESD)
protection is described. The LED includes a Substrate, a patterned semiconductor layer, a …

An optoelectronic device article comprises a substrate containing at least one electrically
conductive microvia, at least one emitter diode and at least one ESD diode, optionally …

A lateral conduction Schottky diode includes multiple mesa regions upon which Schottky
contacts are formed and which are at least separated by ohmic contacts to reduce the …

A light emitting component can include a substrate, a light emitting device supported by the
substrate, wherein the light-emitting device has first and second terminals, and a switching …

In one embodiment, a single light emitting diode lamp package includes at least two light
emitting devices that can be switched independently of one another and thus may be useful …

An LED is disclosed that includes a conductive submount, a bond pad having a total volume
less than 3× 10− 5 mm 3 conductively joined to the submount, a first ohmic contact on the …