Review on vacuum ultraviolet generation in low‐pressure plasmas
Low‐pressure nonequilibrium plasmas can be a source of intense radiation in the vacuum
ultraviolet (VUV) range which can play an important role in the surface modification of solid …
ultraviolet (VUV) range which can play an important role in the surface modification of solid …
Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models
MR Baklanov, V Jousseaume, TV Rakhimova… - Applied Physics …, 2019 - pubs.aip.org
This paper presents an in-depth overview of the application and impact of UV/VUV light in
advanced interconnect technology. UV light application in BEOL historically was mainly …
advanced interconnect technology. UV light application in BEOL historically was mainly …
Multifold study of volume plasma chemistry in Ar/CF4 and Ar/CHF3 CCP discharges
OV Proshina, TV Rakhimova, AI Zotovich… - Plasma Sources …, 2017 - iopscience.iop.org
Low-pressure RF plasma in fluorohydrocarbon gas mixtures is widely used in modern
microelectronics, eg in the etching of materials with a low dielectric constant (low-k) …
microelectronics, eg in the etching of materials with a low dielectric constant (low-k) …
Selective atomic layer etching of Al2O3, AlNx and HfO2 in conventional ICP etching tool
V Kuzmenko, Y Lebedinskij, A Miakonkikh, K Rudenko - Vacuum, 2023 - Elsevier
The atomic layer etching process of Al 2 O 3, AlN x and HfO 2 in conventional plasma
etching tool was investigated. The etching process is based on surface modification by …
etching tool was investigated. The etching process is based on surface modification by …
In situ measurement of VUV/UV radiation from low-pressure microwave-produced plasma in Ar/O2 gas mixtures
EJ Iglesias, F Mitschker, M Fiebrandt… - Measurement …, 2017 - iopscience.iop.org
Ultraviolet (UV) and vacuum ultraviolet (VUV) spectral irradiance is determined in low-
pressure microwave-produced plasma, which is regularly used for polymer surface …
pressure microwave-produced plasma, which is regularly used for polymer surface …
Effect of terminal methyl group concentration on critical properties and plasma resistance of organosilicate low-k dielectrics
Surfactant-templated porous organosilicate glass low-k films have been deposited by using
a tetraethoxysilane (TEOS) and methyltriethoxysilane (MTEOS) mixture with different ratios …
a tetraethoxysilane (TEOS) and methyltriethoxysilane (MTEOS) mixture with different ratios …
Effects of CF4 content on particle densities and reaction pathways in atmospheric-pressure Ar/CF4 pulsed dielectric barrier discharge plasma
C Bai, L Wang, H Wan, L Li, L Liu… - Journal of Physics D …, 2018 - iopscience.iop.org
Ar/CF 4 discharge plasma etching is a promising approach to achieving a high etch rate and
anisotropic etching. A 1D fluid model is established to numerically study the effects of CF 4 …
anisotropic etching. A 1D fluid model is established to numerically study the effects of CF 4 …
Modification of Porous Ultralow-k Film by Vacuum Ultraviolet Emission
AI Zotovich, SM Zyryanov, DV Lopaev… - ACS Applied …, 2022 - ACS Publications
Modification of spin-on-deposited porous PMO (periodic mesoporous organosilica) ultralow-
k (ULK) SiCOH films (k= 2.33) containing both methyl terminal and methylene bridging …
k (ULK) SiCOH films (k= 2.33) containing both methyl terminal and methylene bridging …
Etching characteristics of low-k SiCOH thin films under fluorocarbon-based plasmas
J Comeaux, W Wirth, J Courville, NW Baek, D Jung… - Vacuum, 2022 - Elsevier
Low dielectric constant (low-k) SiCOH thin films were prepared on silicon (Si) wafers using
plasma enhanced chemical vapor deposition (PECVD) of the precursor tetrakis …
plasma enhanced chemical vapor deposition (PECVD) of the precursor tetrakis …
Damage and etching of ultra low-k materials in fluorocarbon plasma at lowered temperatures
DV Lopaev, YA Mankelevich… - Journal of Physics D …, 2017 - iopscience.iop.org
SiOCH ULK films with k-value from 2.5 to 2.1 and porosity from 24 to 40% were etched in
CHF 3, CHF 3+ Ar, CF 4 and CF 4+ Ar plasmas at+ 15...− 120 C with and without bias being …
CHF 3, CHF 3+ Ar, CF 4 and CF 4+ Ar plasmas at+ 15...− 120 C with and without bias being …