High-resolution photoinduced transient spectroscopy and the modulated photocurrent
technique are compared in terms of possible application to the investigation of defect levels …

High-resolution photoinduced transient spectroscopy (HRPITS) has been applied to study
the electronic properties of grown-in point defects in semi-insulating (SI) GaAs bulk crystals …

A neural network (NN) method has been proposed as a new algorithm for extraction of
defect centers parameters in semi-insulating materials from experimental data obtained by …

Defect levels in the n‐type bulk 6H‐SiC have been investigated by deep level transient
spectroscopy (DLTS) and photoinduced transient spectroscopy (PITS). From the DLTS …

Deep level transient spectroscopy (DLTS) has been applied to study defect centers in the
epitaxial layers of nitrogen-doped n-type 4H-SiC before and after the irradiation with a dose …

Deep level transient spectroscopy (DLTS) has been applied to study an effect of electron
irradiation on the concentrations of deep-level defects in bulk 6H–SiC: N single crystals. Six …

An effect of the nitrogen concentration on the concentrations of deep-level defects in bulk 6H-
SiC single crystals is investigated. Six electron traps labeled as T1A, T1B, T2, T3, T4 and T5 …

PROCEEDINGS OF SPIE Page 1 PROCEEDINGS OF SPIE SPIEDigitalLibrary.org/conference-proceedings-of-spie
High-resolution PITS studies of deeplevel defects in semi-insulating GaAs and InP Pawel …

Deep levels in semi-insulating (SI) GaAs have been investigated by two complementary
techniques: the high resolution photoinduced transient spectroscopy performed at the …

Electrically active defects in preannealed n-type Cz-Si crystals subjected to high-pressure
heat treatment were studied by deep level transient spectroscopy (DLTS). Experimental …