Dynamic spatial replenishment of femtosecond pulses propagating in air

M Mlejnek, EM Wright, JV Moloney - Optics letters, 1998 - opg.optica.org
We present numerical simulations of nonlinear pulse propagation in air whereby an initial
pulse is formed, absorbed by plasma generation, and subsequently replenished by power …

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile

H Zhao, G Liu, XH Li, GS Huang, JD Poplawsky… - Applied Physics …, 2009 - pubs.aip.org
Three-layer staggered InGaN quantum wells (QWs) light-emitting diodes (LEDs) emitting at
520–525 nm were grown by metal-organic chemical vapor deposition by employing graded …

Optical gain and laser characteristics of InGaN quantum wells on ternary InGaN substrates

J Zhang, N Tansu - IEEE Photonics Journal, 2013 - ieeexplore.ieee.org
The optical gain and threshold characteristics of InGaN quantum wells (QWs) on ternary
InGaN substrate emitting in green and yellow spectral regimes are analyzed. By employing …

Far‐field and beam characteristics of vertical‐cavity surface‐emitting lasers

YG Zhao, YS Zhang, XL Huang, LT Zhang… - Applied physics …, 1996 - pubs.aip.org
We have determined the far-field patterns and beam parameters of vertical-cavity surface-
emitting lasers (VCSELs) with different structures. The results show that the window …

InGaN-ZnSnN2 quantum wells for high efficiency light emitters beyond green

MR Karim, H Zhao - CLEO: Science and Innovations, 2018 - opg.optica.org
InGaN-ZnSnN2 Quantum Wells for High Efficiency Light Emitters Beyond Green Page 1
STh3I.2.pdf CLEO 2018 © OSA 2018 InGaN-ZnSnN2 Quantum Wells for High Efficiency Light …

Effect of nonlinearity in the pass-through optics on femtosecond laser filament in air

AA Dergachev, AA Ionin, VP Kandidov… - Laser Physics …, 2014 - iopscience.iop.org
The influence of pass-through optics on femtosecond laser pulse filamentation in ambient air
is analyzed for the first time both experimentally and numerically. Propagation of a high …

Gain and spontaneous emission characteristics of AlInN quantum well for deep ultraviolet emitters

CK Tan, N Tansu - 2015 IEEE Photonics Conference (IPC), 2015 - ieeexplore.ieee.org
Gain and spontaneous emission characteristics of AlInN quantum well for deep ultraviolet
emitters Page 1 Gain and Spontaneous Emission Characteristics of AlInN Quantum Well for …

Effect of negative gain suppression on the stability of laser diodes

S Bennett, CM Snowden, S Iezekiel - Applied physics letters, 1995 - pubs.aip.org
The stability of homogeneously pumped single-section laser diodes is analyzed theoretically
and it is found that under certain bias conditions negative gain suppression factor laser …

Analysis of position and thickness dependence of ZnGeN2 layer in type-II InGaN-ZnGeN2 quantum wells light-emitting diodes

J Grgat, L Han, H Zhao - CLEO: Science and Innovations, 2017 - opg.optica.org
Analysis of Position and Thickness Dependence of ZnGeN2 Layer in Type-II InGaN-ZnGeN2
Quantum Wells Light-Emitting Diodes Page 1 STh3I.5.pdf CLEO 2017 © OSA 2017 Analysis of …

Wide-band Tunable Laser via Integration of High Precision Wavelength Spacing DFB Lasers

Z Sun, Z Su, R Xiao, K Liu, YJ Chiu… - CLEO: Applications and …, 2022 - opg.optica.org
Wide-band Tunable Laser via Integration of High Precision Wavelength Spacing DFB Lasers
Page 1 Wide-band Tunable Laser via Integration of High Precision Wavelength Spacing DFB …