A review of the ionizing radiation effects on resistive random access memory (ReRAM)
technology and devices is presented in this article. The review focuses on vertical devices …

The synergistic effect between Total Ionizing Dose (TID) and Analog Single Event Transient
(ASET) in LM124 operational amplifiers (opamps) from three different manufacturers is …

The experiments of the pinned photodiode complementary metal-oxide-semiconductor
(CMOS) image sensors irradiated by 60 Co γ rays, neutrons, and protons are presented. The …

This paper presents the total dose effects of gamma ray and swift heavy ion irradiation on
silicon-germanium heterojunction bipolar transistors (SiGe HBTs). The direct current (DC) …

The Synergistic effect between TID and ATREEs (Analog Transient Radiation Effects on
Electronics) in an operational amplifier (opamp)(LM124) is investigated for three different …

The Synergistic effect between Total Ionizing Dose (TID) and Analog Transient Radiation
Effects in Electronics (ATREE) in an operational amplifier (LM124) is investigated. A …

Based on gated lateral pnp (GLp-np) transistors, the correlation between the high dose rate
(HDR) and low dose rate (LDR) irradiations during the switched dose rate experiments is …

Enhanced low-dose rate sensitivity (ELDRS) exhibited at low-dose rates (LDRs) by most
bipolar devices is considered as one of the main concerns for spacecraft reliability. In this …

The Switched Dose Rate technique is investigated when devices do not exhibit ELDRS.
Experimental data and modeling results are presented and discussed in terms of hardness …

The switched dose rate technique has been proposed as an accelerated test technique for
enhanced low-dose-rate sensitivity. The physical mechanisms at play when this technique is …