Magnetism in two-dimensional materials beyond graphene

N Sethulakshmi, A Mishra, PM Ajayan, Y Kawazoe… - Materials today, 2019 - Elsevier
Magnetic materials enjoy an envious position in the area of data storage, electronics, and
even in biomedical field. This review provides an overview of low-dimensional magnetism in …

Strain-induced semiconductor to metal transition in bilayers (; ; )

H Zhong, W Xiong, P Lv, J Yu, S Yuan - Physical Review B, 2021 - APS
Very recently, a new type of two-dimensional layered material, MoSi 2 N 4, was fabricated
that is semiconducting with weak interlayer interaction, high strength, and excellent stability …

A Dirac-semimetal two-dimensional BeN4: Thickness-dependent electronic and optical properties

A Bafekry, C Stampfl, M Faraji… - Applied Physics …, 2021 - pubs.aip.org
Motivated by the recent experimental realization of a two-dimensional (2D) BeN 4
monolayer, in this study we investigate the structural, dynamical, electronic, and optical …

Hexagonal planar CdS monolayer sheet for visible light photocatalysis

P Garg, S Kumar, I Choudhuri, A Mahata… - The Journal of …, 2016 - ACS Publications
Two-dimensional (2D) stable CdS monolayer sheets are proposed using the state-of-the-art
theoretical calculations. Three different conformers (planar, distorted, and buckled) are …

A Honeycomb BeN2 Sheet with a Desirable Direct Band Gap and High Carrier Mobility

C Zhang, Q Sun - The journal of physical chemistry letters, 2016 - ACS Publications
Using global particle-swarm optimization method, we report, for the first time, a BeN2 sheet
(h-BeN2) with a graphene-like honeycomb lattice but displaying a direct band gap …

Theoretical exploration of promising optoelectronic two-dimensional materials MSi2N4 (M= Cr, Mo, W)

S Xue, H Huang, W Zhao, Q Yu, J Yang, R Tong, Y Hu… - Vacuum, 2024 - Elsevier
The electronic properties of two-dimensional MSi 2 N 4 (M= Cr, Mo, W) monolayer have
been systematically investigated by strain, electric field, bilayer heterostructures, and …

High-Performance Monolayer BeN2 Transistors With Ultrahigh On-State Current: A DFT Coupled With NEGF Study

W Zhou, S Guo, H Zeng, S Zhang - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Conventional field-effect transistors (FETs) based on silicon downscaling are approaching
physical limits, and thus, it is urgent to explore additional novel solutions to address this …

Strain tunable structural, mechanical and electronic properties of monolayer tin dioxides and dichalcogenides SnX2 (XO, S, Se, Te)

LH Qu, J Yu, YL Mu, XL Fu, CG Zhong, Y Min… - Materials Research …, 2019 - Elsevier
Based on first-principles calculations, we investigate the structural, mechanical and
electronic properties of monolayer tin dioxides and dichalcogenides SnX 2 (Xdouble bondO …

Strain tunable electronic and magnetic properties of pristine and semihydrogenated hexagonal boron phosphide

J Yu, W Guo - Applied Physics Letters, 2015 - pubs.aip.org
Tunable electromagnetic properties of pristine two-dimensional boron phosphide (h-BP)
nanosheet and its semihydrogenated structure were studied by density functional theory …

First-principles calculations to investigate structural, elastic, electronic, and thermoelectric properties of monolayer and bulk beryllium chalcogenides

P Kumar, K Rajput, DR Roy - Chemical Physics, 2022 - Elsevier
A detailed first-principles investigation on the structural, vibrational, elastic, electronic, and
thermoelectric properties of the family of beryllium chalcogenides (BeX; X= O, S, Se, Te) in …