This paper introduces an advanced methodology for fast 3-D Technology Computer Aided
Design (TCAD) electrothermal simulation for the analysis of power devices. The proposed …

Electric overload situations in automotive truck applications necessitate a particularly
efficient and reliable heat management for silicon power devices, especially when repetitive …

In this study, the low-cycle fatigue properties (1–15,000 cycles) of electrodeposited Cu,
which is frequently used as metallization in the semiconductor industry, is analyzed with …

Automated interaction of SDevice and HSPICE for fast 3-D electrothermal simulation based
on the relaxation method is designed. The results are compared with device finite element …

The development of accurate and efficient electrothermal models and simulations for power
electronics semiconductors is essential to optimize power electronics circuits and systems …

A simulation approach is presented which can be used to investigate electro-thermal
behavior of power transistors in variety of operating conditions. The approach is discussed …

When performing electro-thermal simulations of power semiconductors, usually the FEM
model of the device does not include small geometrical features in order to limit the …

One of the main design challenges for modern power semiconductor devices is the
reduction of the device footprint while maintaining or even increasing the power density …

This paper presents a finite-element-based simulation methodology to improve on
multiscale modeling and analysis limitations of power electronics development. The method …

This work presents an investigation of the performance assessment of E-mode Mg-doped
In0. 2Ga0. 8N/Al0. 23Ga0. 77N/GaN/Al0. 05Ga0. 95N on AIN substrate use for high-power …