High-performance 4H-SiC-based pin ultraviolet photodiode and investigation of its capacitance characteristics

J Cai, X Chen, R Hong, W Yang, Z Wu - Optics Communications, 2014 - Elsevier
We report on high-performance 4H-SiC-based pin ultraviolet (UV) photodiodes and
investigation of the capacitance characteristics. The fabricated pin photodiode exhibits a …

Negative capacitance in forward biased hydrogenated amorphous silicon diodes

F Lemmi, NM Johnson - Applied physics letters, 1999 - pubs.aip.org
We present experimental results and a physical explanation for the negative values of the
small-signal capacitance of forward biased hydrogenated amorphous silicon (a-Si: H) p+-in+ …

MBE-grown hybrid axial core–shell nip gaassb heterojunction ensemble nanowire-based near-infrared photodetectors up to 1.5 μm

P Ramaswamy, K Dawkins, H Kuchoor… - Crystal Growth & …, 2022 - ACS Publications
In this paper, high-performance self-assisted molecular beam epitaxy (MBE)-grown
conventional core–shell (C–S) nip GaAsSb nanowires (NWs) and a novel hybrid axial C–S …

Amorphous silicon photosensors for detection of Ochratoxin A in wine

D Caputo, G de Cesare, C Fanelli… - IEEE Sensors …, 2012 - ieeexplore.ieee.org
The presence of ochratoxin A (OTA) in different food commodities deserves great attention
because of its toxic and carcinogenic effects on humans and animals. In this paper, we …

Low-temperature admittance measurement in thin film amorphous silicon structures

D Caputo, U Forghieri, F Palma - Journal of applied physics, 1997 - pubs.aip.org
In this paper we analyze low-temperature admittance capacitance and conductance
measurement as an effective tool for the characterization of amorphous silicon doped layers …

Ruthenium phthalocyanine thin films for photovoltaic applications

A Capobianchi, M Tucci - Thin Solid Films, 2004 - Elsevier
In this work we focus on heterojunction devices based on ruthenium phthalocyanine (RuPc)
2 and fullerene (C60) molecular organic materials, useful for very low-cost photovoltaic …

Infrared photodetection at room temperature using photocapacitance in amorphous silicon structures

D Caputo, G de Cesare, A Nascetti, F Palma… - Applied physics …, 1998 - pubs.aip.org
In this letter we present a device, based on amorphous silicon material, able to detect
infrared light through capacitance measurement at room temperature. The device is a pcn …

Optimization of n-doping in n-type a-SI: H/p-type textured c-Si heterojunction for photovoltaic applications

M Tucci - Solar energy materials and solar cells, 1999 - Elsevier
In this paper is investigated an heterostructure based on p-doped textured wafers of
crystalline silicon on which we deposited a buffer of lightly n-doped amorphous layer and an …

[HTML][HTML] Microfluidic cartridge with integrated array of amorphous silicon photosensors for chemiluminescence detection of viral DNA

M Zangheri, M Mirasoli, A Nascetti, D Caputo… - Sensing and bio …, 2016 - Elsevier
Portable and simple analytical devices based on microfluidics with chemiluminescence
detection are particularly attractive for point-of-care applications, offering high detectability …

A new NEMS based linear-to-rotary displacement-capacity transducer

A Buzzin, A Veroli, G de Cesare… - 2019 IEEE 8th …, 2019 - ieeexplore.ieee.org
This paper presents a new NEMS-Technology based device, which transduces micro-metric
linear displacements of a tip probe into capacity variations of a rotary comb-drive. The …