The past few decades have witnessed a notable increase in transition metal dichalcogenide
(TMD) related research not only because of the large family of TMD candidates but also …

Abstract Two-dimensional (2D) materials are regarded as promising candidates in many
applications, including electronics and optoelectronics, because of their superior properties …

Achieving the full potential of any semiconductor device needs an understanding and
precise control of carrier transport behavior, which significantly affects the stability and …

To support the ever-growing demand for faster, energy-efficient computation, more
aggressive scaling of the transistor is required. Two-dimensional (2D) transition metal …

Inserting hexagonal boron nitride (hBN) as barrier layers into bilayer transition metal
dichalcogenides heterointerface has been proved an efficient method to improve two …

The thickness and area of WS 2 are critical for the optoelectronic response and bandgap. It
is necessary to develop a large-area WS 2 with an adjustable bandgap to obtain a high …

Crystal phase transitions can form a new type of heterojunction with different atomic
arrangements in the same material: crystal phase heterojunction (CPHJ). The CPHJ has an …

Alloying strategies permit new probes for governing structural stability and semiconductor–
semimetal phase transition of transition metal dichalcogenides (TMDs). However, the …

The floating body effect in Meta-Stable-Dip RAM (MSDRAM) has been broadly employed in
implementing single-transistor capacitor-less (1T0C) dynamic random access memory …

Controlled polarity regulation is one of the key obstacles to the practical application of two-
dimensional semiconductor field-effect transistors (FETs). Herein, n-and p-channel WSe2 …