X Yu, TJ Marks, A Facchetti - Nature materials, 2016 - nature.com
Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional …
F Pan, S Gao, C Chen, C Song, F Zeng - Materials Science and …, 2014 - Elsevier
This review article attempts to provide a comprehensive review of the recent progress in the so-called resistive random access memories (RRAMs). First, a brief introduction is presented …
JS Meena, SM Sze, U Chand, TY Tseng - Nanoscale research letters, 2014 - Springer
Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing …
Neuromorphic materials are promising for fabricating artificial synapses for flexible electronics, but they are usually expensive and lack a good combination of electronic and …
The need for the development of transparent conductive electrodes (TCEs) supported on flexible polymer substrates has explosively increased in response to flexible polymer‐based …
JS Park, WJ Maeng, HS Kim, JS Park - Thin solid films, 2012 - Elsevier
The present article is a review of the recent progress and major trends in the field of thin-film transistor (TFT) research involving the use of amorphous oxide semiconductors (AOS). First …
The present status and recent research results on amorphous oxide semiconductors (AOSs) and their thin-film transistors (TFTs) are reviewed. AOSs represented by amorphous In–Ga …
H Akinaga, H Shima - Proceedings of the IEEE, 2010 - ieeexplore.ieee.org
In this paper, we review the recent progress in the resistive random access memory (ReRAM) technology, one of the most promising emerging nonvolatile memories, in which …
Flexible non‐volatile memories have attracted tremendous attentions for data storage for future electronics application. From device perspective, the advantages of flexible memory …