A review of memristor: material and structure design, device performance, applications and prospects

Y Xiao, B Jiang, Z Zhang, S Ke, Y Jin… - … and Technology of …, 2023 - Taylor & Francis
With the booming growth of artificial intelligence (AI), the traditional von Neumann
computing architecture based on complementary metal oxide semiconductor devices are …

A review of resistive switching devices: performance improvement, characterization, and applications

T Shi, R Wang, Z Wu, Y Sun, J An, Q Liu - Small Structures, 2021 - Wiley Online Library
As human society enters the big data era, huge data storage and energy‐efficient data
processing are in great demand. The resistive switching device is an emerging device with …

In‐Memory Computing using Memristor Arrays with Ultrathin 2D PdSeOx/PdSe2 Heterostructure

Y Li, S Chen, Z Yu, S Li, Y Xiong, ME Pam… - Advanced …, 2022 - Wiley Online Library
In‐memory computing based on memristor arrays holds promise to address the speed and
energy issues of the classical von Neumann computing system. However, the stochasticity of …

High-Performance Neuromorphic Computing and Logic Operation Based on a Self-Assembled Vertically Aligned Nanocomposite SrTiO3:MgO Film Memristor

Z Guo, G Liu, Y Sun, Y Zhang, J Zhao, P Liu, H Wang… - ACS …, 2023 - ACS Publications
Neuromorphic computing based on memristors capable of in-memory computing is
promising to break the energy and efficiency bottleneck of well-known von Neumann …

A review on device requirements of resistive random access memory (RRAM)-based neuromorphic computing

JH Yoon, YW Song, W Ham, JM Park, JY Kwon - APL Materials, 2023 - pubs.aip.org
With the arrival of the era of big data, the conventional von Neumann architecture is now
insufficient owing to its high latency and energy consumption that originate from its …

Exsolution synthesis of nanocomposite perovskites with tunable electrical and magnetic properties

J Wang, K Syed, S Ning, I Waluyo… - Advanced Functional …, 2022 - Wiley Online Library
Nanostructured functional oxides play an important role in enabling clean energy
technologies and novel memory and processor devices. Using thin‐film La0. 6Sr0. 4FeO3 …

Ultralow set voltage and enhanced switching reliability for resistive random-access memory enabled by an electrodeposited nanocone array

Q Xue, Y Peng, L Cao, Y Xia, J Liang… - … Applied Materials & …, 2022 - ACS Publications
Resistive random-access memory (RRAM) has been extensively investigated for 20 years
due to its excellent advantages, including scalability, switching speed, compatibility with the …

High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory

K Zhang, J Wang, Y Huang, LQ Chen… - npj Computational …, 2020 - nature.com
Abstract Metal oxide-based Resistive Random-Access Memory (RRAM) exhibits multiple
resistance states, arising from the activation/deactivation of a conductive filament (CF) inside …

Towards engineering in memristors for emerging memory and neuromorphic computing: A review

AS Sokolov, H Abbas, Y Abbas… - Journal of …, 2021 - iopscience.iop.org
Resistive random-access memory (RRAM), also known as memristors, having a very simple
device structure with two terminals, fulfill almost all of the fundamental requirements of …

Introduction of interfacial load polymeric layer to organic flexible memristor for regulating conductive filament growth

HL Park, MH Kim, SH Lee - Advanced Electronic Materials, 2020 - Wiley Online Library
In flexible neuromorphic electronics, solution‐processed organic memristors are important
elements to perform memory functions. Despite considerable development for improving …