Investigation on the Dynamic Characteristics of Hydrogen Plasma Treated p-GaN HEMTs Circuit Using ASM-GaN Model
This study demonstrates the first work that achieves accurate modeling of Hydrogen plasma-
treated (H-treated) p-GaN gate devices with the ASM-GaN model, facilitating simulations for …
treated (H-treated) p-GaN gate devices with the ASM-GaN model, facilitating simulations for …