Continuous intersection joins over moving objects

R Zhang, D Lin, K Ramamohanarao… - 2008 IEEE 24th …, 2008 - ieeexplore.ieee.org
The continuous intersection join query is computationally expensive yet important for various
applications on moving objects. No previous study has specifically addressed this query …

Spintronic memristor based temperature sensor design with CMOS current reference

X Bi, C Zhang, H Li, Y Chen… - 2012 Design, Automation …, 2012 - ieeexplore.ieee.org
As the technology scales down, the increased power density brings in significant system
reliability issues. Therefore, the temperature monitoring and the induced power …

Design, Fabrication, and Characterization of a PTAT Sensor Using CMOS Technology

M Szermer, M Jankowski, M Janicki - Electronics, 2024 - mdpi.com
This paper presents the design of an integrated temperature sensor. The sensor was
manufactured using the 3 µm CMOS technology. The proportional to absolute temperature …

A 69 μW CMOS smart temperature sensor with an inaccuracy of±0.8° C (3σ) from− 50° C to 150° C

SC Lee, H Chiueh - SENSORS, 2012 IEEE, 2012 - ieeexplore.ieee.org
A proposed temperature sensor is based on pure CMOS PTAT circuitry, a preamplifier and a
sigma delta ADC capable of simple and efficient temperature sensor conversion to digital …

Design of a 0.8 V low power CMOS temperature sensor for RFID-based train axle temperature measurement

J Qian, J Chen, C Zhang, L Wu - 2010 10th IEEE International …, 2010 - ieeexplore.ieee.org
A novel CMOS temperature sensor embedded in a passive UHF RFID tag is presented. The
sensor consists of a temperature-to-current converter, two current-starved ring oscillators …

0.6–2.0 V, All-CMOS temperature sensor front-end using bulk-driven technology

ST Block, Y Li, Y Yang, C Li - 2010 IEEE Dallas Circuits and …, 2010 - ieeexplore.ieee.org
An All-CMOS temperature sensor front-end is designed to work with a supply voltage range
of 0.6 to 2.0 volts, and temperature range from 0 to 120° C. The flexibility of 0.6 to 2.0 volt …

Ultra-low power CMOS voltage reference for high temperature applications up to 300° C

A Hassan, B Gosselin, M Sawan - 2015 IEEE International …, 2015 - ieeexplore.ieee.org
A voltage reference circuit dedicated for high temperature applications is presented. A high-
temperature operation range up to 300° C and an ultra-low-power consumption of 6 μA …

A low power temperature sensor for passive RFID tag

Y Liu, DS Liu, XC Zou, JB Xu, FB Li… - Proceedings of the 2009 …, 2009 - ieeexplore.ieee.org
A novel low power temperature sensor of strong power supply variation rejection ability for
passive RFID tags is presented. As a resource reuse method adopting by the proposed …

S-band CMOS Buffer Amplifier with Integrated Temperature Sensor

DV Borisov, KE Shusharina, AA Kokolov… - 2024 IEEE 25th …, 2024 - ieeexplore.ieee.org
This paper presents the results of the S-band buffer amplifier design with an integrated
temperature sensor based on 180 nm CMOS technology. Existing methods of gain …

Accurate operation of a CMOS integrated temperature sensor

J Li, X Weisheng, Y Youlin - Microelectronics journal, 2010 - Elsevier
A high-accuracy temperature sensor is designed by applying the temperature characteristics
of substrate bipolar transistor in CMOS technology. Initial accuracy of the temperature …