Highly efficient GaN-based high-power flip-chip light-emitting diodes
S Zhou, X Liu, H Yan, Z Chen, Y Liu, S Liu - Optics express, 2019 - opg.optica.org
High-power flip-chip light-emitting diodes (FCLEDs) suffer from low efficiencies because of
poor p-type reflective ohmic contact and severe current crowding. Here, we show that it is …
poor p-type reflective ohmic contact and severe current crowding. Here, we show that it is …
Numerical and experimental investigation of GaN-based flip-chip light-emitting diodes with highly reflective Ag/TiW and ITO/DBR Ohmic contacts
S Zhou, X Liu, Y Gao, Y Liu, M Liu, Z Liu, C Gui… - Optics express, 2017 - opg.optica.org
We demonstrate two types of GaN-based flip-chip light-emitting diodes (FCLEDs) with highly
reflective Ag/TiW and indium-tin oxide (ITO)/distributed Bragg reflector (DBR) p-type Ohmic …
reflective Ag/TiW and indium-tin oxide (ITO)/distributed Bragg reflector (DBR) p-type Ohmic …
GaN-based flip-chip LEDs with highly reflective ITO/DBR p-type and via hole-based n-type contacts for enhanced current spreading and light extraction
S Zhou, C Zheng, J Lv, Y Gao, R Wang, S Liu - Optics & Laser Technology, 2017 - Elsevier
We demonstrate GaN-based double-layer electrode flip-chip light-emitting diodes (DLE-
FCLED) with highly reflective indium-tin oxide (ITO)/distributed bragg reflector (DBR) p-type …
FCLED) with highly reflective indium-tin oxide (ITO)/distributed bragg reflector (DBR) p-type …
Demonstration of vertical GaN schottky barrier diode with robust electrothermal ruggedness and fast switching capability by eutectic bonding and laser lift-off …
In this letter, we have successfully transferred the 4-inch crack-free GaN films from sapphire
substrate to conductive silicon wafer by employing eutectic bonding and laser lift-off (LLO) …
substrate to conductive silicon wafer by employing eutectic bonding and laser lift-off (LLO) …
High-speed parallel micro-LED arrays on Si substrates based on via-holes structure for visible light communication
H Chai, S Yao, L Lei, Z Zhu, G Li… - IEEE Electron Device …, 2022 - ieeexplore.ieee.org
In this work, the parallel micro-light-emitting diode (LED) arrays based on via-holes structure
with various array numbers from to are proposed. The photoelectric characteristics and …
with various array numbers from to are proposed. The photoelectric characteristics and …
High thermal performance ultraviolet (368 nm) AlGaN-based flip-chip LEDs with an optimized structure
G Sun, T Dong, A Luo, J Yang, Y Dong, G Du, Z Hong… - Nanomaterials, 2024 - mdpi.com
In this study, we have fabricated a 368 nm LED with an epitaxial Indium Tin Oxide (ITO)
contact layer. We analyze the thermal performance of the flip-chip LED with a symmetric …
contact layer. We analyze the thermal performance of the flip-chip LED with a symmetric …
Impact of tin-oxide nanoparticles on improving the carrier transport in the Ag/p-GaN interface of InGaN/GaN micro-light-emitting diodes by originating inhomogeneous …
JH Lee, ABMH Islam, TK Kim, YJ Cha… - Photonics Research, 2020 - opg.optica.org
The effect of tin-oxide (SnO) nanoparticles, which are obtained by indium-tin-oxide (ITO)
treatment, on the p-GaN surface of GaN-based flip-chip blue micro-light-emitting diode (μ …
treatment, on the p-GaN surface of GaN-based flip-chip blue micro-light-emitting diode (μ …
High power InGaN/GaN flip‐chip LEDs with via‐hole‐based two‐level metallization electrodes
J Lv, C Zheng, Q Chen, S Zhou, S Liu - physica status solidi (a), 2016 - Wiley Online Library
High power flip‐chip light‐emitting diodes with distributed n‐type via‐hole‐based two‐level
metallization electrodes (TLM‐FCLED) were fabricated and investigated. Comparison tests …
metallization electrodes (TLM‐FCLED) were fabricated and investigated. Comparison tests …
Fabrication of phosphor-free III-nitride nanowire light-emitting diodes on metal substrates for flexible photonics
In this paper, we report our study on high-performance III-nitride nanowire light-emitting
diodes (LEDs) on copper (Cu) substrates via the substrate-transfer process. Nanowire LED …
diodes (LEDs) on copper (Cu) substrates via the substrate-transfer process. Nanowire LED …
Numerical simulation and experimental investigation of GaN-based flip-chip LEDs and top-emitting LEDs
X Liu, S Zhou, Y Gao, H Hu, Y Liu, C Gui, S Liu - Applied Optics, 2017 - opg.optica.org
We demonstrate a GaN-based flip-chip LED (FC-LED) with a highly reflective indium-tin
oxide (ITO)/distributed Bragg reflector (DBR) ohmic contact. A transparent ITO current …
oxide (ITO)/distributed Bragg reflector (DBR) ohmic contact. A transparent ITO current …