Silicon interposers with through-silicon vias (TSVs) will enable further miniaturization and
reduction in power consumption for future electronic systems. The design and method of …

An electrically functional freestanding Si interposer for 3-D heterogeneous integration
applications is designed and successfully fabricated. The interposer employs multilevel …

Successful implementation of 3D integration technology requires understanding of the
unique yield and reliability issues associated with through-silicon vias (TSVs), with adequate …

High aspect ratio through-silicon-vias (HAR-TSVs) are critical for enabling vertical
interconnections in the next-generation 3D chiplets integrations. However, the …

The fabrication of through-silicon vias (TSVs) is a major component in the development of
three-dimensional (3D) integration technology and advanced 3D packaging approaches …

Leveler additives for Cu electrodeposition are critical for achieving bottom-up filling in
micrometer scale and high aspect ratio (AR) through-silicon vias (TSVs). This study explores …

This study demonstrates the magnetostatic torsional actuator consisting in a Si–Ni
compound frame to significantly improve the driving force. The present design has three …

Low cost wafer-level chip-scale vacuum packaging (WLCSVP) imposes unique constraints
on potential implementation of through-silicon vias (TSVs). A WLCSVP requires a relatively …

In this study, stepwise current was used for TSV Cu electroplating. TSV with void defect and
solid filled TSV showed different voltage behavior at low current density. Based on voltage …

This study demonstrates the magnetostatic torsional actuator consisting of a Si-Ni compound
frame to significantly improve the driving force. The present design has three merits:(1) …