Hot Carrier Reliability in 45 nm Strained Si/relaxed Si 1− x Ge x CMOS Based SRAM Cell

Study of Strained-SiGe Channel P-MOSFET Using Silvaco TCAD: Impact of Channel Thickness

SNFN Mohd Salleh, AF Abd Rahim… - Key Engineering …, 2023 - Trans Tech Publ
Compressively strained SiGe is an interesting channel material for sub 45 nm p-MOSFETs
because of its superior hole mobility (up to 10x over bulk Si channels) and compatibility with …
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Study of Strained-SiGe Channel P-MOSFET Using Silvaco TCAD: Impact of Channel Thickness

SNFNM Salleh, AF Abd Rahim, NSM Razali… - Engineering Materials …, 2023 - torrossa.com
Compressively strained SiGe is an interesting channel material for sub 45 nm p-MOSFETs
because of its superior hole mobility (up to 10x over bulk Si channels) and compatibility with …
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