Two-dimensional germanene has provided a cornucopia of new functionalities in the field of
nanotechnology owing to its remarkable electronic and thermoelectric attributes. The robust …

The low-dose neutron irradiation defect evolution and nanoindentation response of indium
(In)-doped gallium nitride (GaN) materials are investigated in this work, which is of great …

The wear behaviors and plastic deformation mechanisms of indium (In)-doped gallium
nitride (GaN) induced by nano-grinding are investigated in this work, which is of great …

The epitaxial growth of cubic In x Ga 1-x N layers on GaN (0 0 1) buffer substrates is
investigated using molecular dynamics simulation. The substrate temperature, flux ratio of In …

We present a computational study of amorphous boron carbide (aB x C) models using
Molecular Dynamics (MD) studied with Stillinger-Weber (SW) and ReaxFF potential. The …

With the molecular dynamics method, this paper investigates radiation-induced defects in
the In 0.16 Ga 0.84 N/GaN superlattice structure (SLS) and the In 0.04 Ga 0.96 N/GaN SLS …

On the basis of the improved Stillinger–Weber potential model, the growth process of an
indium nitride (InN) film on a gallium nitride (GaN) substrate has been simulated by …

In this paper, a new version of the Stillinger–Weber (SW) potential for wurtzite GaN is
presented, by which we systematically explore the structural and thermodynamical …

The research on semiconductor materials has attracted significant interest of researchers in
the last few decades, due to their applications in numerous industrial sectors as well as in …

In this work, we analyzed the interactions between copper and selenium (Cu-Se) atoms in
the second stage of a co-evaporation growth process of copper indium gallium diselenide …