Operation of SiGe HBTs down to 70 mK

H Ying, BR Wier, J Dark, NE Lourenco… - IEEE Electron …, 2016 - ieeexplore.ieee.org
We present the first measurement results of a highly scaled, 90-nm silicon-germanium
heterojunction bipolar transistor (SiGe HBT) operating at cryogenic temperatures as low as …

Sub-nanoampere one-shot single electron transistor readout electrometry below 10 kelvin

K Das, T Lehmann, AS Dzurak - IEEE Transactions on Circuits …, 2014 - ieeexplore.ieee.org
The Single Electron Transistor holds the potential to be a suitable readout device for future
solid-state quantum computers. The low temperature measurement results of a 0.5 μm …

Mismatch insensitive automatic tuning control for the single electron transistor readout circuit

K Das, T Lehmann - 2013 IEEE 56th International Midwest …, 2013 - ieeexplore.ieee.org
Unavailability of suitable simulation models poses a particularly difficult problem in the field
of CMOS analog circuit design for deep cryogenic applications: the performance of the …

[PDF][PDF] COLLECTOR CURRENT TRANSPORT MECHANISMS IN SIGE HBTS OPERATING AT CRYOGENIC TEMPERATURES

HV Ying - 2019 - core.ac.uk
Along the journey of this research, there are so many people that gave me big helps. Without
them, this work will not be possible. Although there is not enough room to properly thank …

[引用][C] Scalable control electronics for a spin based quantum computer

L Geck - 2021 - Dissertation, RWTH Aachen …