Performance estimation of junctionless multigate transistors
This paper describes the simulation of the electrical characteristics of a new transistor
concept called the “Junctionless Multigate Field-Effect Transistor (MuGFET)”. The proposed …
concept called the “Junctionless Multigate Field-Effect Transistor (MuGFET)”. The proposed …
[HTML][HTML] Comprehensive Review of FinFET Technology: History, Structure, Challenges, Innovations, and Emerging Sensing Applications
The surge in demand for 3D MOSFETs, such as FinFETs, driven by recent technological
advances, is explored in this review. FinFETs, positioned as promising alternatives to bulk …
advances, is explored in this review. FinFETs, positioned as promising alternatives to bulk …
Tri-gate transistor architecture with high-k gate dielectrics, metal gates and strain engineering
J Kavalieros, B Doyle, S Datta, G Dewey… - 2006 Symposium on …, 2006 - ieeexplore.ieee.org
We have combined the benefits of the fully depleted tri-gate transistor architecture with high-
k gate dielectrics, metal gate electrodes and strain engineering. High performance NMOS …
k gate dielectrics, metal gate electrodes and strain engineering. High performance NMOS …
Transport spectroscopy of a single dopant in a gated silicon nanowire
We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between
source and drain of a gated nanowire etched from silicon on insulator. The electronic states …
source and drain of a gated nanowire etched from silicon on insulator. The electronic states …
Investigation of silicon nanowire gate-all-around junctionless transistors built on a bulk substrate
A silicon nanowire (Si-NW) with a gate-all-around (GAA) structure is implemented on a bulk
wafer for a junctionless (JL) field-effect transistor (FET). A suspended Si-NW from the bulk-Si …
wafer for a junctionless (JL) field-effect transistor (FET). A suspended Si-NW from the bulk-Si …
Few-electron edge-state quantum dots in a silicon nanowire field-effect transistor
We investigate the gate-induced onset of few-electron regime through the undoped channel
of a silicon nanowire field-effect transistor. By combining low-temperature transport …
of a silicon nanowire field-effect transistor. By combining low-temperature transport …
Device design guidelines for nano-scale MuGFETs
The short-channel properties of multi-gate SOI MOSFETs (MuGFETs) are studied by
numerical simulation. The evolution of characteristics such as DIBL, subthreshold slope, and …
numerical simulation. The evolution of characteristics such as DIBL, subthreshold slope, and …
On the feasibility of nanoscale triple-gate CMOS transistors
JW Yang, JG Fossum - IEEE Transactions on Electron Devices, 2005 - ieeexplore.ieee.org
The feasibility of triple-gate MOSFETs (TGFETs) for nanoscale CMOS applications is
examined with regard to short-channel effects (SCEs) and gate-layout area. Three …
examined with regard to short-channel effects (SCEs) and gate-layout area. Three …
Fabrication and characterization of gate-all-around silicon nanowires on bulk silicon
V Pott, KE Moselund, D Bouvet… - IEEE transactions on …, 2008 - ieeexplore.ieee.org
This paper reports on the top-down fabrication and electrical performance of silicon
nanowire (SiNW) gate-all-around (GAA) n-type and p-type MOSFET devices integrated on …
nanowire (SiNW) gate-all-around (GAA) n-type and p-type MOSFET devices integrated on …
High inversion current in silicon nanowire field effect transistors
Silicon nanowire (SiNW) field effect transistors (FETs) with channel widths down to 20 nm
have been fabricated by a conventional “top-down” approach by using electron-beam …
have been fabricated by a conventional “top-down” approach by using electron-beam …