In order to realize 250–350-nm-band high-efficiency deep ultraviolet (UV) emitting devices
using group-III-nitride materials, it is necessary to obtain high-efficiency UV emission from …

In recent years, visible light communication (VLC) technology has attracted intensive
attention due to its huge potential in superior processing ability and fast data transmission …

We review a selection of recent research work on III‐nitride materials, limiting the scope to
bulk properties and quantum well structures. The different stages of development of the …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

A set of Al 0.35 Ga 0.65 N∕ Al 0.49 Ga 0.51 N multiple quantum wells (MQWs) with fixed
barrier width and well widths varying from 1.65 to 5.0 nm has been grown by metal-organic …

Studies of internal electric fields in GaN/Al x Ga 1-x N (3 nm/4 nm) multi-quantum-wells
(MQWs) with x= 0.25, 0.5, and 1 are presented. The structures were grown by plasma …

Recombination dynamics of the 268 nm photoluminescence (PL) peak in a quaternary Al
0.53 In 0.11 Ga 0.36 N∕ Al 0.58 In 0.02 Ga 0.40 N multiple quantum well (MQW) grown on …

We present here a review of the peculiar optical properties of GaN/AlN quantum dots. These
systems show unusually large exciton binding energies and band-offsets. Moreover, when …

The effects of the Si doping level on the recombination dynamics and carrier (exciton)
localization in modulation doped GaN/Al0. 07Ga0. 93N multiple‐quantum‐well (MQW) …

High-pressure growth from solution is at present the only method able to provide true bulk
GaN monocrystals. In this paper, we would like to demonstrate that in spite of their small …