[HTML][HTML] Influence of metal choice on (010) β-Ga2O3 Schottky diode properties
A systematic study of Schottky barriers fabricated on (010) β-Ga 2 O 3 substrates is reported.
Schottky barrier heights (SBHs) and current transport modes were analyzed using a …
Schottky barrier heights (SBHs) and current transport modes were analyzed using a …
Discrepancies in barrier heights obtained from current–voltage (IV) and capacitance–voltage (CV) of Au/PNoMPhPPy/n-GaAs structures in wide range of …
Au/n-GaAs device was fabricated with an organic PNoMPhPPy thin polymer interfacial layer
whose bandgap (E g) was found as 2.95 eV from the (αhν) 2–hν plot. The PNoMPhPPy poly …
whose bandgap (E g) was found as 2.95 eV from the (αhν) 2–hν plot. The PNoMPhPPy poly …
The structural and optical properties of GO: Temperature-dependent analysis of the electrical properties of Al/GO/p-type Si semiconductor structures
A spin-coating process has been used to generate graphene oxide (GO) thin films on p-type
silicon. The temperature-dependent basic electrical characteristics of Al/GO/p-type Si metal …
silicon. The temperature-dependent basic electrical characteristics of Al/GO/p-type Si metal …
Characterisation of temperature dependent parameters of multi-quantum well (MQW) Ti/Au/n-AlGaAs/n-GaAs/n-AlGaAs Schottky diodes
Forward and reverse current-voltage (Isingle bondV) of Ti/Au/n-Al 0.33 Ga 0.67 As/n-GaAs/n-
Al 0.33 Ga 0.67 As multi-quantum well (MQW) Schottky diodes were measured over a range …
Al 0.33 Ga 0.67 As multi-quantum well (MQW) Schottky diodes were measured over a range …
THE CURRENT–VOLTAGE CHARACTERISTICS OVER THE MEASUREMENT TEMPERATURE OF 60–400 K IN THE Au/Ti/-GaAs CONTACTS WITH HIGH DIELECTRIC HfO …
The Au/Ti/HfO2/n-GaAs metal/insulating layer/semiconductor structures have been
fabricated using standard thermal atomic layer deposition. We experimentally showed …
fabricated using standard thermal atomic layer deposition. We experimentally showed …
The analyzing of IV performance of PbO2/n-Si heterojunction in the wide temperature range
AR Deniz - Journal of Alloys and Compounds, 2021 - Elsevier
In this study, lead oxide (PbO 2) was used as interface material in Schottky diode
applications. The morphological properties of PbO 2 were analyzed by using Scanning …
applications. The morphological properties of PbO 2 were analyzed by using Scanning …
Role of Reduced Graphene Oxide-Gold Nanoparticle Composites on Au/Au-RGO/p-Si/Al Structure Depending on Sample Temperature
In order to understand the current conduction mechanism in metal-semiconductor rectifier
junctions, it is important to take electrical measurements depending on the sample …
junctions, it is important to take electrical measurements depending on the sample …
High performance of Ag/AlN/Si Schottky diode: Study of the DC sputtering power effect on its electrical properties
The DC sputtering power (DC SP) effect on the chemical composition, structural and
electrical properties of Ag/AlN/Si Schottky diode was studied. The AlN films grown on Si …
electrical properties of Ag/AlN/Si Schottky diode was studied. The AlN films grown on Si …
Survival Temperature Dependent Electronic Charge Transformation in Organic Schottky Barrier Interface
K Chakraborty, A Das, NB Manik - Solid State Communications, 2025 - Elsevier
Organic Turmeric dye (OTD) based diode structure is considered to investigate current-
voltage (IV) analysis in survival temperature range of 300K-340 K. Barrier height (Φ b) is …
voltage (IV) analysis in survival temperature range of 300K-340 K. Barrier height (Φ b) is …
[PDF][PDF] The comparison of the methods used for determining of Schottky diode parameters in a wide temperature range
DA Aldemir, A Kökce, AF Özdemir - Sakarya University Journal of …, 2017 - dergipark.org.tr
The current-voltage (IV) data of Ni/n-GaAs Schottky diodes with 50 nm Schottky metal
thickness has been measured in the temperature range of 60 K to 320 K. The important …
thickness has been measured in the temperature range of 60 K to 320 K. The important …