The primary requirement for the development of tools for extreme ultraviolet lithography
(EUVL) has been the identification and optimization of suitable sources. These sources must …

Extreme ultraviolet lithography requires a high-efficiency light source at 13 nm that is free
from debris. Our mass-limited Sn-based laser plasma source shows 1.2% conversion …

The emission properties of tin plasmas, produced by the irradiation of preformed liquid tin
targets by several-ns-long 2 µm-wavelength laser pulses, are studied in the extreme …

We demonstrated an efficient extreme ultraviolet (EUV) source at a wavelength of 13.5 nm
using spatially separated multiple solid-state-laser pulse irradiation. The maximum …

Extreme ultra-violet (EUV) lithography is most likely to be used for the production of
semiconductors from 2009. One of the potential showstoppers in the commercialization is …

An examination of the influence of target composition and viewing angle on the extreme
ultraviolet spectra of laser produced plasmas formed from tin and tin doped planar targets is …

One key aspect in the drive to optimize the radiative output of a laser-produced plasma for
extreme ultraviolet lithography is the radiation transport through the plasma. In tin-based …

We have investigated the unresolved transition array (UTA) emission around 13.5 nm from
solid density tin and tin doped foam targets. Extreme ultraviolet (EUV) spectral …

Extreme ultraviolet emission spectra of multiply charged Sn ions were measured in the
wavelength range 5–38 nm, following electron capture into the excited states of slow Sn …

Charge state specific euv spectra from a range of tin ions have been recorded at Tokyo
Metropolitan University. The spectra were produced from charge-exchange collisions …