Gallium nitride (GaN) light-emitting-diode (LED) technology has been the revolution in
modern lighting. In the last decade, a huge global market of efficient, long-lasting, and …

III‐nitride semiconductors have attracted considerable attention in recent years owing to
their excellent physical properties and wide applications in solid‐state lighting, flat‐panel …

Efficiency droop in GaN-based light emitting diodes (LEDs) under high injection current
density perplexes the development of high-power solid-state lighting. Although the relevant …

The advantages of using an Al x Ga 1-x N carrier reservoir layer (CRL) instead of the
traditional last quantum barrier for deep-ultraviolet light-emitting diodes (DUV LEDs) were …

A simple experimental method of light emitting diode (LED) injection efficiency (IE)
determination was suggested. IE and internal quantum efficiency (IQE) calculation is an …

Growth of III-nitrides on non-single-crystalline substrates at low growth temperature will
greatly benefit the development of large-scale and flexible display/lighting technologies …

This work investigated the impact of using the dual-triangle quantum barriers (DTQBs) in
AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs). The DUV-LED with …

Self-assembled nanowires are posed to be viable alternatives to conventional planar
structures, including the nitride epitaxy for optoelectronic, electronic and nano-energy …

By considering the effects of stress fields coming from lattice distortion as well as charge
fields coming from line charges at edge dislocation cores on radiative recombination of …

GaN epilayers are globally grown on amorphous glass substrates via a compound buffer
layer including Ti pre-orienting layer and AlN nucleation layer (NL) grown by molecular …