Design, simulation and analog/RF performance evaluation of a hetero-stacked source dual metal T-shaped gate tunnel-FET in thermally variable environments
M Kumar, G Bhaskar, A Chotalia, C Rani… - Microsystem …, 2024 - Springer
In this work, a new Hetero-Stacked Source Dual Metal T-shaped Gate Silicon-on-Insulator
(SOI) TFET (HS-DMTG-TFET) is proposed, exhibiting significantly improved DC …
(SOI) TFET (HS-DMTG-TFET) is proposed, exhibiting significantly improved DC …
Composite channel 100 nm InP HEMT with ultrathin barrier for millimetre wave applications
This study introduces a High Electron Mobility Transistor (HEMT) designed for millimeter-
wave applications, utilizing a composite channel structure based on InP and InGaAs-InAs …
wave applications, utilizing a composite channel structure based on InP and InGaAs-InAs …