Advances of RRAM devices: Resistive switching mechanisms, materials and bionic synaptic application
Resistive random access memory (RRAM) devices are receiving increasing extensive
attention due to their enhanced properties such as fast operation speed, simple device …
attention due to their enhanced properties such as fast operation speed, simple device …
Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing
M Hellenbrand, J MacManus-Driscoll - Nano Convergence, 2023 - Springer
In the growing area of neuromorphic and in-memory computing, there are multiple reviews
available. Most of them cover a broad range of topics, which naturally comes at the cost of …
available. Most of them cover a broad range of topics, which naturally comes at the cost of …
Copolymers of 3-arylthieno [3, 2-b] thiophenes bearing different substituents: synthesis, electronic, optical, sensor and memory properties
Thienothiophene (TT) is one of the most impressive organic cores, and has gained
significant attention in the organic polymeric materials in recent years. Possessing cyano …
significant attention in the organic polymeric materials in recent years. Possessing cyano …
Towards engineering in memristors for emerging memory and neuromorphic computing: A review
Resistive random-access memory (RRAM), also known as memristors, having a very simple
device structure with two terminals, fulfill almost all of the fundamental requirements of …
device structure with two terminals, fulfill almost all of the fundamental requirements of …
Linearity improvement of HfOx-based memristor with multilayer structure
Y Jiang, K Zhang, K Hu, Y Zhang, A Liang… - Materials Science in …, 2021 - Elsevier
The limitation of traditional Von Neumann architecture could be resolved by machine
learning training in neuromorphic computing. However, the nonlinearity characteristic during …
learning training in neuromorphic computing. However, the nonlinearity characteristic during …
Applications of Ion Beam Irradiation in multifunctional oxide thin films: A Review
Multifunctional oxide thin films exhibit a broad palette of properties, such as ferroelectricity,
piezoelectricity, dielectricity, superconductivity, and metal-insulator transition (MIT); …
piezoelectricity, dielectricity, superconductivity, and metal-insulator transition (MIT); …
Oxide-based filamentary RRAM for deep learning
We provide an overview of the field of oxide-based filamentary resistive random access
memory (RRAM) for deep learning neural networks (DNNs). After introducing the electrical …
memory (RRAM) for deep learning neural networks (DNNs). After introducing the electrical …
[HTML][HTML] Spike-time dependent plasticity of tailored ZnO nanorod-based resistive memory for synaptic learning
Metal oxide resistive memory is a potential device that can substantially influence the current
roadmap for nonvolatile memory and neuromorphic computing. However, common …
roadmap for nonvolatile memory and neuromorphic computing. However, common …
Kinetic Monte Carlo analysis of data retention in Al: HfO2-based resistive random access memories
S Aldana, E Pérez, F Jiménez-Molinos… - Semiconductor …, 2020 - iopscience.iop.org
Abstract Kinetic Monte Carlo resistive random access memory simulations are used to
understand different retention experiments performed at several temperatures. The physics …
understand different retention experiments performed at several temperatures. The physics …
Effect of electrode area on resistive switching behavior in translucent solution-processed AlOx based memory device
A translucent resistance random access memory (RRAM) device with Ag/AlO x/indium tin
oxide (ITO) stack grown on a glass substrate were fabricated. The effect of the electrode …
oxide (ITO) stack grown on a glass substrate were fabricated. The effect of the electrode …