Substrates for gallium nitride epitaxy
L Liu, JH Edgar - Materials Science and Engineering: R: Reports, 2002 - Elsevier
In this review, the structural, mechanical, thermal, and chemical properties of substrates
used for gallium nitride (GaN) epitaxy are compiled, and the properties of GaN films …
used for gallium nitride (GaN) epitaxy are compiled, and the properties of GaN films …
[HTML][HTML] III-nitride nanowires on unconventional substrates: From materials to optoelectronic device applications
Group-III nitrides and their alloys feature direct bandgaps covering a broad range of the
electromagnetic spectrum, making them a promising material system for various …
electromagnetic spectrum, making them a promising material system for various …
Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]
M Roschke, F Schwierz - IEEE Transactions on electron …, 2001 - ieeexplore.ieee.org
Models for the electron mobility in the three most important silicon carbide (SiC) polytypes,
namely, 4H, 6H, and 3C SiC are developed. A large number of experimental mobility data …
namely, 4H, 6H, and 3C SiC are developed. A large number of experimental mobility data …
4H‐SiC: a new nonlinear material for midinfrared lasers
S Wang, M Zhan, G Wang, H Xuan… - Laser & Photonics …, 2013 - Wiley Online Library
Nonlinear optical (NLO) frequency conversion is commonly used for generating midinfrared
(MIR) lasers that offer light sources for a variety of applications. However, the low laser …
(MIR) lasers that offer light sources for a variety of applications. However, the low laser …
Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy
M Kuball, S Rajasingam, A Sarua, MJ Uren… - Applied physics …, 2003 - pubs.aip.org
The temperature distribution in multifinger high-power AlGaN/GaN heterostructure field-
effect transistors grown on SiC substrates was studied. Micro-Raman spectroscopy was …
effect transistors grown on SiC substrates was studied. Micro-Raman spectroscopy was …
Facile formation of high-quality InGaN/GaN quantum-disks-in-nanowires on bulk-metal substrates for high-power light-emitters
High-quality nitride materials grown on scalable and low-cost metallic substrates are
considerably attractive for high-power light-emitters. We demonstrate here, for the first time …
considerably attractive for high-power light-emitters. We demonstrate here, for the first time …
High-quality factor, high-confinement microring resonators in 4H-silicon carbide-on-insulator
Silicon carbide (SiC) exhibits promising material properties for nonlinear integrated optics.
We report on a SiC-on-insulator platform based on crystalline 4H-SiC and demonstrate high …
We report on a SiC-on-insulator platform based on crystalline 4H-SiC and demonstrate high …
An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination
We present a detailed study of the effects of dangling bond passivation and the comparison
of different sulfide passivation processes on the properties of InGaN/GaN quantum-disk …
of different sulfide passivation processes on the properties of InGaN/GaN quantum-disk …
Analysis and parameter design of SiC-based current source inverter (CSI)
X Yang, Z Zhao, C Wang, J Xu, K Liu, J Qiu - World Electric Vehicle …, 2022 - mdpi.com
Current source inverters (CSIs) use inductors as the major component to store energy.
Compared with voltage source inverters (VSIs), CSIs have two advantages: 1. They can …
Compared with voltage source inverters (VSIs), CSIs have two advantages: 1. They can …
On the deformation mechanism of SiC under nano-scratching: An experimental investigation
J Hu, Y He, Z Li, L Zhang - Wear, 2023 - Elsevier
SiC is an important semiconductor but is difficult to machine due to its high hardness and
low fracture toughness. The deformation mechanisms of SiC subjected to single-point …
low fracture toughness. The deformation mechanisms of SiC subjected to single-point …